The influence of deep level defects (DLs) on the conversion efficiency of
multicrystalline Si-based standard solar cells (SCs) is investigated.
Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200
μm thickness were used for SCs preparation. Three types of SCs with
conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance
voltage characteristics method (C-V) and by current deep level transient
spectroscopy (I-DLTS). The correlation between the total concentration of DLs
and the values of the SCs conversion efficiency is found.