A method for hybrid integration of III-V optoelectronic components on Si substrate using BCB was demonstrated. The method included bonding, selective wet etching of the GaAs substrate, components separation by wet etching, two-level metallization and lateral oxidation to form optical apertures. Simulations of thermal behavior and mechanical stresses of this integration scheme were performed using finite element analysis, which revealed adequate heat dissipation. Simulations show that this bonding protocol allows reduction of overheating and mechanical stress that enhances the optoelectronic device performance and increases reliability. Electro-luminescence spectrum, I-V and P-T characteristics were measured and compared with a reference homoepitaxial structure and the results of the simulations. Measured thermal impedance was found to be less then two times higher than that for the devices on a host GaAs wafer. Novel method of substrate removal named oxidation lift-off was proposed and demonstrated. This process allows to release a VCSEL structure with epitaxial DBRs and separate individual components on Si, reduces the number of process steps and eventually reduces cost of the fabricated devices. Au/Ge alloy was used for the metal bonding of the test oxidation lift-off structure. Substrate removal, device separation, bonding and formation of the oxide apertures were done within a single processing step.