The use of rutile-type titanium dioxide (TiO2) thin films as advanced gate dielectrics has been hampered by thermodynamic instability during the high deposition or annealing temperature of 800 °C. In this work, we demonstrate that rutile-type TiO2 thin films can be produced on p-type Si (100) at lower substrate temperature by means of bias-assisted cathodic arc deposition. The influence of the substrate bias on the microstructural and dielectric characteristics of the TiO2 thin films is investigated in detail. Our results show that by applying a suitable bias to the Si substrate, as-deposited rutile-type TiO2 thin films can be obtained at 450 °C. The permittivity of the materials increases significantly from 21 up to 76. The interfacial and electrical properties of TiO2/Si (100) are also improved. The effects and mechanism of the bias on the microstructural and dielectric characteristics are described.