To investigate why the formation of electromigration damage in Al lines alloyed with both 0.1 at.% Ni and 0.1 at.% Cr is so effectively suppressed we studied electromigration induced changes in the electrical resistance of short lines. The length of the lines is 4, 6, 8, or 12 µm, the width is 4 µm and the film thickness is 0.3 µm. As previously reported for pure Al lines, depending on current density and sample length, the induced resistance changes fully recover or do not recover after DC stressing for a few hours. The recoverable resistance changes correspond to the build-up or relaxation of mechanical stress and the permanent resistance changes to the formation of a void or hillock. Electron microprobe analysis and resistance measurements after prolonged current stressing provided no evidence for changes in local solute concentration. Therefore diffusion of Al along grain boundaries is regarded as the dominating diffusion process. The activation energy and the pre-exponential factor of this process are determined from the temperature dependence of the relaxation time of the recoverable resistance changes. The activation energy of this process is 0.84±0.03 eV and the pre-exponential factor δD0 = (1.8±0.8)×10−8 cm3/s. At 175 °C the resulting diffusion coefficient is about a factor 70 smaller than that of pure Al. The transition from recoverable to permanent resistance changes is characterized by a constant critical current density -sample length product. It is found that the value of this product for the Al-Ni-Cr lines is two times larger than the value found for pure Al lines. This means that the threshold current density at given sample length for the formation of hillocks or voids is two times larger. Both the slower solvent diffusion and the higher threshold current density contribute positively to a long electromigration lifetime.