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The OSU-FEI Electron Microscopy Collaboratory multiplies the number of individuals who can experience hands-on advanced microscopy techniques. The microscopy classroom allows up to 33 attendees to operate, individually and in real time, electron microscopes as if they were sitting in front of the actual instruments. The communications link, a fast backbone augmented by Internet2, allows various microscopes to be operated from the classroom or by collaborators in another city. This system transforms the training of new users from a one-person-at-a-time session with an expert operator to a group collaborative activity that can include users from around the world.
The ability to characterize recombination and carrier trapping processes in group-III nitride-based nanowires is vital to further improvements in their overall efficiencies. While advances in scanning transmission electron microscope (STEM)-based cathodoluminescence (CL) have offered some insight into nanowire behavior, inconsistencies in nanowire emission along with CL detector limitations have resulted in the incomplete understanding in nanowire emission processes. Here, two nanowire heterostructures were explored with STEM-CL: a polarization-graded AlGaN nanowire light-emitting diode (LED) with a GaN quantum disk and a polarization-graded AlGaN nanowire with three different InGaN quantum disks. Most nanowires explored in this study did not emit. For the wires that did emit in both structures, they exhibited asymmetrical emission consistent with the polarization-induced electric fields in the barrier regions of the nano-LEDs. In the AlGaN/InGaN sample, two of the quantum disks exhibited no emission potentially due to the three-dimensional landscape of the sample or due to limitations in the CL detection.