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The aim of this study was to test the association between anxiety at the time of hospitalization and falls occurring within one month of discharge, and to offer potential mechanisms for this association.
One-month, prospective cohort study of 556 older adults in two medical centers in Israel. Anxiety and functional decline were assessed during hospitalization and falls were assessed one month post-discharge.
A total of 72 (12.9%) participants reported at least one fall during the 30-day post-discharge period. Controlling for demographics, functional decline and pre-morbid functional status, the odds of falls between discharge, and 1-month follow-up were almost twice as high among patients with anxiety symptoms (OR = 1.89, 95% CI: 1.04-3.48) compared with those who screened negative for anxiety. After accounting for in-hospital functional decline, the relationship between anxiety symptoms and falls decreased by 11% (from OR = 2.13 to 1.89), indicating that the relationship between anxiety and falls was partially mediated by functional decline during hospitalization.
Anxiety at time of hospitalization is associated with falls 30-days post-discharge, controlling for several well-known confounders. This relationship is partially mediated by functional decline. Identifying patients with anxiety for inclusion in targeted rehabilitation interventions may be an important component of fall prevention strategies.
The selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge layers serve as channels for a hole current out of the semiconductor to sustain the dissolution reaction. The tunnelling of holes through the potential barrier at the semiconductor surface is assumed to be the dominating mechanism of the hole transfer to the electrolyte.
The effect of Sb on the formation of Ge nano islands in Si by means of molecular beam epitaxy is reported. We observe in the Ge/Si(100) system a non-monotonic dependence of the Stranski-Krastanov critical thickness of Ge islands formation on the adsorbed Sb amount. Dome- and hut-shaped Ge islands are replaced with the pyramids, when Ge is deposited on the Sb-covered Si(100) surface. The Sb-mediated conservation of the shape of Ge islands during embedding them in Si is shown. We assume that the decrease of the surface diffusion of Si and Ge ad-atoms causes these effects.