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Effects of thermal annealing in the properties of PECVD amorphous-Si0.8C0.2:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed Si0.8C0.2:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers.
Pentacene thin-film transistors (TFT) were fabricated on aluminum foils using polymethyl methacrylate (PMMA) as gate dielectric. In such structure, the aluminum substrate acts as the gate electrode itself. A bottom gate inverted structure was used to study the influence of the dielectric and the aluminum substrate on the device performance.
Pentacene thin-films were deposited by thermal evaporation in high-vacuum at deposition rates around 3 Ås-1 and three different substrate temperatures (30, 60 and 90°C). The maximum process temperature achieved was 170°C, corresponding to the baking of polymethyl methacrylate. The TFTs exhibit field-effect mobility values of ∼ 10-3 cm2V-1s-1 and threshold voltage values around –15 V. The influence of the dielectric and the substrate temperature on the pentacene structure and device field-effect mobility is discussed.
Amorphous intrinsic silicon carbide (a-SiCx:H(i)) films and amorphous phophorous doped silicon carbide (a-SiCx:H(n)) films deposited by plasma enhanced chemical vapor deposition (PECVD) from silane/methane mixtures provide excellent electronic passivation of p-type c-Si. Effective surface recombination velocities (Seff) lower than 23 cm s-1 have been reported for a- SiCx:H(i) films and Seff < 11 cm s-1 for a-SiCx:H(n) films. The analysis of the dependence of Seff on the injection level indicates that the good electronic passivation is due to field-effect passivation resulting from a high fixed charge (Qf) created in the a-SiCx:H film. In this work the absorption of SiH bonds in infrared transmission spectra of a-SiCx:H films is quantitatively analysed resulting in about 30% smaller amount of SiH bonds in phosphorous doped films compared to intrinsic films. Furthermore, a strong reciprocal correlation of the hydrogen content in the films and the Qf created at the a-SiCx:H/c-Si interface is observed.
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