The use of a nitrogen rf plasma source for p-type ZnSe grown by MBE, has allowed a variety of pn junction based devices to be realized. The pn junctions have been combined with (Zn,Cd)Se quantum wells to implement semiconductor injection lasers, operating in the blue/green portion of the spectrum, which were reported by 3M and the Brown/Purdue group in the summer of 1991. In the past year the field has moved rapidly. In particular, we can now report CW operation at low temperatures as well as pulsed operation at room temperature (490nm) using a Zn(S,Se)-based device configuration. Laser power output per facet for some designs is above 300 mW, and threshold current densities are as low as 1000A/cm 2 at room temperature. Lasing was demonstrated from devices grown on both p and n-type GaAs substrates. X-ray rocking curves of theII-VI regions exhibit FWHM values below 20 arcsec for specific samples. Dislocation densities are less than 105 cm−2, below the threshold of TEM plan view imaging. The blue LEDs provide power outputs in excess of 100μW while exhibiting external quantum efficiencies of 0.1% at room temperature.