EPR, photocarrier cyclotron resonance and DLTS measurements have been performed on laser-annealed Si wafers.
In virgin Si, an isotropic EPR line at g1 = 2.0055± 0.0005 and a carrier lifetime decrease, assessed by cyclotron resonance, are correlated to the creation of vacancy complexes associated to Oxygen.
In implanted Si, only defects due to the tailing effect of implantation process are observed by DLTS. These levels can be divided into two groups, one of them is stronglycorrelated with the implanted parameter. They are ascribed to primary or complex associations of point defects.