We report on a study of thermal interactions between pairs of Ni, Cr, and Pt films and their silicides on a Si substrate. For each pair of metals M1, M2, four systems were investigated: Si−M1 −2, Si−M2 −M2, Si−M1 Si−M2 and Si−M2Si−M1 giving altogether twelve initial combinations. Samples were annealed in the temperature range of 300−700°C and the analysis was made by Backscattering Spectrometry (BS). It is found that double layers of uniform silicides can be grown when the Cr silicide is the top layer. The rate of CrSi2 formation in this case is less then that reported for CrSi2 growth on Si substrate. In all other cases we find some intermixing. Impurities are found to effect the growth kinetics and the layer morphology.