The Palaeolithic–Neolithic transition in East Asia is characterised by the transformation of mobile hunter-gatherer groups into sedentary communities. The existence of ‘ice-age’ pottery in the Japanese archipelago, however, is inconsistent with claims that directly link climatic warming with sedentism and the development of ceramics. Here, the authors reconsider the chronology and palaeoenvironment of the Maedakochi site in Tokyo. New AMS dating and environmental data suggest that intensified inland fishing in cold environments, immediately prior to the Late Glacial warm period, created conditions conducive to sedentism and the development of subsistence-related pottery.

Phase and amplitude is controlled by manipulating the digitized radiation field. Application to the phase switching, and the calibration of phase and amplitude is discussed.

FFT based 2D Dygital Lens is discussed comparing with Fourier synthesis. The sensitivity of constructing Large Array will be 50mJy. Precise manipuration of the radiation field is possible in it.

A method based on the electroforming technique has been proposed for the fabrication of nanoparticle-reinforced copper-matrix composites using an electrolyte of copper sulfate–sulfuric acid solution containing 1 cm3/L of the nanoparticles without surfactants. Of the tested nanoparticles such as Al2O3, SiO2, TiO2, ZrO2, and CeO2, whose sizes ranged from 10 to 30 nm, only TiO2 nanoparticles were successfully embedded in the copper matrix during electroforming, owing to their positive charge in the electrolyte solution. It should be noted that there was very little contamination in the copper matrix, because surfactants were absent during electroforming. Therefore, the electrical conductivity of the specimen that was electroformed in the electrolytes with TiO2 nanoparticles was not significantly different from that of pure copper. Nevertheless, the hardness, yield, and ultimate tensile strength were significantly improved by a small amount (0.3 mass%) of TiO2 nanoparticles primarily because of strengthening by Orowan mechanics. The electroforming process is thus a promising means to prepare copper-matrix composites with an excellent balance of electrical conductivity and mechanical strengths.

Apart from simply connected spaces, a non-simply connected co-H-space is a typical example of a space X with a coaction of Bπ1 (X) along rX: X → Bπ1 (X), the classifying map of the universal covering. If such a space X is actually a co-H-space, then the fibrewise p-localization of rX (or the ‘almost’ p-localization of X) is a fibrewise co-H-space (or an ‘almost’ co-H-space, respectively) for every prime p. In this paper, we show that the converse statement is true, i.e. for a non-simply connected space X with a coaction of Bπ1 (X) along rX, X is a co-H-space if, for every prime p, the almost p-localization of X is an almost co-H-space.

Population genetics of invading pests can be informative for understanding their ecology. In this study, we investigated population genetics of the invasive alfalfa weevil Hypera postica in Fukuoka Prefecture, Japan. We analyzed mitochondrial tRNALeu-COII, nuclear EF-1α gene fragments, and Wolbachia infection in relation to three leguminous host plants: Vicia angustifolia, Vicia villosa, and a new host Astragalus sinicus cultivated as a honey source and green manure crop. A parsimony network generated from mitochondrial gene sequences uncovered two major haplotypic groups, Western and Egyptian. In contrast to reported Wolbachia infection of the Western strain in the United States, none of our analyzed individuals were infected. The absence of Wolbachia may contribute to the stable coexistence of mitochondrial strains through inter-strain reproductive compatibility. Hypera postica genetic variants for the mitochondrial and nuclear genes were associated neither with host plant species nor with two geographic regions (Hisayama and Kama) within Fukuoka. Mitochondrial haplogroups were incongruent with nuclear genetic variants. Genetic diversity at the nuclear locus was the highest for the populations feeding on V. angustifolia. The nuclear data for A. sinicus-feeding populations indicated past sudden population growth and extended Bayesian skyline plot analysis based on the mitochondrial and nuclear data showed that the growth of A. sinicus-feeding population took place within the past 1000 years. These results suggest a shorter history of A. sinicus as a host plant compared with V. angustifolia and a recent rapid growth of H. postica population using the new host A. sinicus.

The concept of ${{C}_{k}}$ -spaces is introduced, situated at an intermediate stage between $H$ -spaces and $T$ -spaces. The ${{C}_{k}}$ -space corresponds to the $k$ -th Milnor–Stasheff filtration on spaces. It is proved that a space $X$ is a ${{C}_{k}}$ -space if and only if the Gottlieb set $G(Z,\,X)\,=\,[Z,\,X]$ for any space $Z$ with cat $Z\,\le \,k$ , which generalizes the fact that $X$ is a $T$ -space if and only if $G(\sum B,\,X)\,=\,[\sum B,\,X]$ for any space $B$ . Some results on the ${{C}_{k}}$ -space are generalized to the $C_{k}^{f}$ -space for a map $f\,:\,A\,\to \,X$ . Projective spaces, lens spaces and spaces with a few cells are studied as examples of ${{C}_{k}}$ -spaces, and non- ${{C}_{k}}$ -spaces.

For an H-space with a generating subspace, we construct a space whose K-cohomology is a direct sum of a truncated polynomial algebra and an ideal, which enables technical restrictions to be removed from several known results in the homotopy theory of H-spaces.

Adjoint actions of compact simply connected Lie groups are studied by Kozima and the second author based on the series of studies on the classification of simple Lie groups and their cohomologies. At odd primes, the first author showed that there is a homotopy theoretic approach that will prove the results of Kozima and the second author for any 1-connected finite loop spaces. In this paper, we use the rationalization of the classifying space to compute the adjoint actions and the cohomology of classifying spaces assuming torsion free hypothesis, at the prime 2. And, by using Browder's work on the Kudo–Araki operations Q1 for homotopy commutative Hopf spaces, we show the converse for general 1-connected finite loop spaces, at the prime 2. This can be done because the inclusion j: G > BAG satisfies the homotopy commutativity for any non-homotopy commutative loop space G.

Correlation between defect structures and light emission from Si-nanocrystal doped SiO2 films has been studied using electron spin resonance ( ESR ) and photoluminescence ( PL ) methods. The ESR analysis revealed the presence of three kinds of ESR centers in the film after annealing at above 900 °C in argon ( Ar ) atmosphere, i.e. Si dangling bond in amorphous Si cluster ( a-center: g=2.006 ), Si dangling bond at Si-nanocrystal/SiO2 interface ( Pb-center: g=2.003 ) and conduction electrons in Si-nanocrystal ( Pce-center: g=1.998 ). Moreover, visible light emission was observed in the annealed sample from the PL measurement. Both the PL intensity and the ESR signal intensity of the Pce-center were increased with an increase of annealing temperature. These results indicate that the Pce-center is strongly associated with the emission center.

We propose a novel process module by using cryo-implantation and rapid thermal annealing (RTA). Boron or arsenic ions were implanted into a 8 inch (100) Si substrate which was cooled by using liquid nitrogen. The substrate temperature was controlled to be below at -160°C during ion implantation. It was found that an amorphous layer was formed by boron or arsenic implantation and the amorphous layer was completely recovered to a single crystal after annealing at 900°C for 30sec. No dislocation was observed in the implanted layer. It was also found that the thermal diffusion of boron was suppressed by cryo-implantation. PN junction depth was found to be about 10-20% shallower than that of room temperature implantation. These results suggest that transient enhanced diffusion of boron can be reduced by suppressing vacancy migration toward the surface during implantation. Cryo-implantation was found to be very effective in reducing defects and PN junction leakage was successfully reduced by one order of magnitude as compared with room temperature implantation.

We have fabricated the electroluminescence (EL) device using silicon (Si) nanocrystals, which were formed on Si substrate by co-sputtering of Si and silicon dioxide (SiO2). By treating with the Si nanocrystals in the hydrofluoric (HF) acid solution, the SiO2 region of the luminous layer reduced, and then, the electrons were efficiently injected in the Si nanocrystals. At the same time, Pb-center (non-radiative recombination center) was decreased by hydrogen termination to the Si-dangling bond in the interface between the Si nanocrystals and the SiO2 layer From these effects of the HF treatment, the high efficiency red light emission with the external quantum efficiency (EQE) of 0.35 % was obtained from the HF treated EL device under the operating voltage of +4.5 V.

The carbon nanotubes were grown on the round Ni particles at the growth temperature below 60 °C by the radio frequency plasma CVD equipment from the acetylene and the hydrogen gases. For the low growth of the carbon nanotubes, the acetylene concentration in the hydrogen gas was essential parameter. In the case of the high acetylene concentration above 30 %, the cauliflower-like carbon film was grown. On the other hand, the low acetylene concentration of 10 % realized the low temperature growth of the carbon nanotubes.

Mechanical properties and thermal stability of bulk glassy alloys depend on their chemical composition ratios, although their detailed local structures especially around free volume have not been clarified yet. In order to know the origin of property dependence on alloy composition in Zr-Cu-Al ternary bulk glassy alloys in a view point of atomic scale, positron annihilation lifetime, coincidence Doppler broadening (CDB) and EXAFS (extended X-ray absorption fine structure) measurements have been employed for eutectic Zr50Cu40Al10 and hypoeutectic Zr60Cu30Al10 bulk glassy alloys before and after structural relaxation by annealing below glass transition temperature Tg .

The result of CDB experiment, which represents the electron momentum distribution around free volume, shows that significant atomic reordering around free volume does not take place by the annealing in each alloy. Besides, CDB ratio profiles for each alloy suggest that the fraction of Zr atom around free volume does not match the chemical composition of each alloy system. Change in positron lifetime, which is proportional to the size of free volume, during annealing for hypoeutectic alloy almost remains unchanged.

The effect of 120 MeV oxygen ion irradiation on the current-voltage(I-V) characteristics has been studied at 77.3 K in YBaCuO superconductors. In the small current region, the voltage V against the current I and the ion-fluence Φ can be described by the following simple form; ln(V/VO)=αln(I/IO)×ln(Φ/ΦO), where α, VO, IO and ΦO are constants. The experimental results have been discussed in terms of current-induced unbinding of thermally excited vortex pairs.

B doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

Radiation-induced segregation (RIS) in Ni-12.7% Si and Cu-1% Au alloys was studied using Rutherford backscattering spectroscopy during He and Ne irradiation at elevated temperatures. During single ion-beam irradiation with 1.5 MeV He, strong RIS of Si toward the surface was observed in Ni-12.7% Si. Simultaneous irradiation with 400 keV Ne and 1.5 MeV He almost completely suppressed the Si segregation, even when the calculated damage production rate by Ne was only a few percent of that by He ions. A similar effect of dual-beam irradiation was observed in the Cu-1% Au alloy, i.e., the rate of near surface Au depletion was strongly reduced under simultaneous irradiation. The present result shows that dual-beam irradiation can be applied to control RIS and RED (Radiation Enhanced Diffusion) during ion beam processing.

Current-voltage characteristics of high resistivity CdTe, with consideration to Schottky barrier height at the contact and defect levels in the band gap were investigated by experimental and numerical simulation methods. From the electron injection investigation, the density of electron traps corresponded to the doped Cl concentration in the crystal. Numerical simulation of current-voltage characteristics was made based on Schockley Read Hall (SRH) statistics. In the low bias region, calculated characteristics were in fairly close agreement with the experimental results for Pt/CdTe/Pt diode. The electric field was not uniform along the biased direction and an almost neutral region was present in the vicinity of anode contact even when the bias was applied.

The effects of cascade remnants on Freely Migrating Defects (FMD) were studied by measuring Radiation-Induced Segregation (RIS) in Cu-l%Au at 400°C during simultaneous irradiation with 1.5-MeV He and (400-800)-keV heavy ions (Ne, Ar or Cu). The large RIS observed during 1.5-MeV He-only irradiation was dramatically suppressed under simultaneous heavy ion irradiation. For Cu simultaneous irradiation, the suppression disappeared immediately after the Cu irradiation ceased, while for simultaneous inert gas (Ne or Ar) irradiation, the suppression persisted after the ion beam was turned off. These results demonstrate that the displacement cascades created by heavy ions introduce additional annihilation sites, which reduce the steady-state FMD concentrations. As the cascade remnants produced by Cu ions are thermally unstable at 400°C, the RIS suppression occurs only during simultaneous irradiation. On the other hand, the inert gas atoms which accumulate in the specimen apparently stabilize the cascade remnants, allowing the suppression to persist.

A new formation method for an ultra-low resistivity contact and structural analysis are discussed. In this study, a minimum contact resistivity of 6.9× 10−9 Ω·cm2 has been successfully obtained in an AlSi(lwt%)Cu(0.5wt%) alloy / Si system by using heavy dose ion implantations of Ge and B combined with low temperature annealing as low as 550°C. Structural analysis on the Si surface layer has been carried out. As a result, it was found that the crystal lattice was expanded in-plane by 6% in the Si layer near the surface because of the high concentration of Ge and no relaxation of lattice strain at such a low temperature. It was also found that super-saturation of B was stably formed in this system. An ultra-low resistivity contact is considered to be a result of these combined effects.