A series of PtSi on p-type Si diodes have been characterized in order to establish correlations among processing parameters, metallurgical features and electrical properties. Characterization techniques include analytical (TED, TEM), electrical (current-voltage characteristics), and optical (photoemission and absorption). The fabrication techniques involve e-beam evaporation of platinum layers at UHV levels onto VLSI grade (100) p-type silicon substrates. The silicide layers are formed via sub-eutectic solid state diffusion at 350°C. The main trends with thickness as well as possible interrelationships are described. An unexpected result is the presence of unreacted polycrystalline Pt and Pt2Si at the interface.