In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary A10.5Ga0.5As alloy and (AlAs)n(GaAs)4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, redshifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)n(GaAs)4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.