Results are presented on the photoluminescence of plasma deposited amorphous carbon (a-C:H) films. Emission and exci tation spectra anti-Stokes emission, PL decay and fatigue, T-dependence of PL and photobleaching were mesuared. The data are discussed in terms of radiative recombination of the strongly localized electron-hole pairs.
As recently shown, in amorphous hydrogenated carbon films (a-C:H) powerful talls of localized states occur in the mobility gap that are due to a high degree of structural disorder  while a radiative recombination in this material is highly efficient [2, 3]. These properties, in our view, make a-C:H suitable for verification of models of recombination kinetics of photoexcited charge carriers in highly disordered systems with the use of photoluminescence (PL).