In this paper, a new SPICE-compatible circuit model for
low voltage, low on-resistance power FLYMOSFETs is presented for the first
time. In this new structure, the improvement of the on-resistance has been
obtained by inserting floating islands in the lowly doped layer. Our
modelling is based on device physics, analytical study and on experimental
characterization. The inter-electrode capacitances are modelled accurately
as nonlinear functions, and good agreement between simulation and
measurements is found.