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Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D2.3
- Print publication:
- 2004
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Characterization of Atomic Layer DepositedWNxCy Thin Film as a Diffusion Barrier for CopperMetallization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 766 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E10.9
- Print publication:
- 2003
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Atomic Layer CVD for Continuously Shrinking Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 612 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, D6.4.1
- Print publication:
- 2000
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