2 results
Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1167 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1167-O05-06
- Print publication:
- 2009
-
- Article
- Export citation
1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1167 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1167-O05-03
- Print publication:
- 2009
-
- Article
- Export citation