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9 - Graphene Electronics

from Part I

Published online by Cambridge University Press:  22 June 2017

Phaedon Avouris
Affiliation:
IBM T. J. Watson Research Center, New York
Tony F. Heinz
Affiliation:
Stanford University, California
Tony Low
Affiliation:
University of Minnesota
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Type
Chapter
Information
2D Materials
Properties and Devices
, pp. 159 - 179
Publisher: Cambridge University Press
Print publication year: 2017

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References

9.7 References

Schwierz, F. Graphene Transistors. Nat Nanotechnol 5 487496, (2010).Google Scholar
Bolotin, K. I. et al. Ultrahigh Electron Mobility in Suspended Graphene. Solid State Commun. 146, 351355 (2008).Google Scholar
Elias, D. C. et al. Dirac Cones Reshaped by Interaction Effects in Suspended Graphene. Nat Phys 7, 701704 (2011).Google Scholar
Castro, E. V. et al. Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons. Phys Rev Lett 105, 266601 (2010).Google Scholar
Liao, L. et al. High-κ Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-Gated Graphene Transistors. Proc Natl Acad Sci USA 107, 67116715 (2010).Google Scholar
Meric, I. et al. Current Saturation in Zero-Bandgap, Topgated Graphene Field-Effect Transistors. Nat Nanotechnol 3, 654659 (2008).Google Scholar
Liao, L. and Duan, X. Graphene for Radio Frequency Electronics. Mater Today 15, 328338 (2012).Google Scholar
Lin, Y. M. et al. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene. Science 327, 662662 (2010).CrossRefGoogle ScholarPubMed
Jeon, D.-Y. et al. Radio-Frequency Electrical Characteristics of Single Layer Graphene. Jpn J Appl Phys 48, 091601 (2009).Google Scholar
Lin, Y.-M. et al. Operation of Graphene Transistors at Gigahertz Frequencies. Nano Lett 9, 422426 (2009).CrossRefGoogle ScholarPubMed
Xia, F. et al. Ultrafast Graphene Photodetector. Nat Nanotechnol 4, 839843 (2009).Google Scholar
Liao, L. et al. Sub-100 nm Channel Length Graphene Transistors. Nano Lett 10, 39523956 (2010).Google Scholar
Liao, L. et al. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate. Nature 467, 305308 (2010).Google Scholar
Li, X. et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 324, 13121314 (2009).Google Scholar
Reina, A. et al. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition. Nano Lett 9, 3035 (2009).Google Scholar
Bae, S. et al. Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes. Nat Nanotechnol 5, 574578 (2010).Google Scholar
Chen, J. H. et al. Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2. Nat Nanotechnol 3, 206209 (2008).Google Scholar
Zhou, X. J. et al. Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors. Phys Rev Lett 95 (2005).Google Scholar
Obradovic, B. et al. Analysis of Graphene Nanoribbons as a Channel Material for Field-Effect Transistors. Appl Phys Lett 88 (2006).Google Scholar
Perebeinos, V. et al. Electron–Phonon Interaction and Transport in Semiconducting Carbon Nanotubes. Phys Rev Lett 94 (2005).CrossRefGoogle ScholarPubMed
Shishir, R. and Ferry, D. Velocity Saturation in Intrinsic Graphene. J Phys: Condensed Matter 21, 344201 (2009).Google Scholar
Li, X. L. et al. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors. Science 319, 12291232 (2008).CrossRefGoogle ScholarPubMed
Bai, J. W. et al. Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask. Nano Lett 9, 20832087 (2009).Google Scholar
Liao, L. et al. Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics. Nano Lett 10, 19171921 (2010).Google Scholar
Jiao, L. Y. et al. Narrow Graphene Nanoribbons from Carbon Nanotubes. Nature 458, 877880 (2009).Google Scholar
Wei, D. C. et al. Controllable Unzipping for Intramolecular Junctions of Graphene Nanoribbons and Single-Walled Carbon Nanotubes. Nat Commun 4, 1374(2013).Google Scholar
Han, M. Y. et al. Energy Band-Gap Engineering of Graphene Nanoribbons. Phys Rev Lett 98, 206805 (2007).Google Scholar
Yang, L., Park, C. H., Son, Y. W., Cohen, M. L., and Louie, S. G. Quasiparticle Energies and Band Gaps in Graphene Nanoribbons. Phys Rev Lett 99, 186801 (2007).Google Scholar
Liao, L. et al. High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics. Adv Mater 22, 1941 (2010).Google Scholar
Bai, J. W. et al. Graphene Nanomesh. Nat Nanotechnol 5, 190194 (2010).CrossRefGoogle ScholarPubMed
Berrada, S. et al. Graphene Nanomesh Transistor with High On/Off Ratio and Good Saturation Behavior. Appl Phys Lett 103 (2013).Google Scholar
Seol, G. et al. Performance Projection of Graphene Nanomesh and Nanoroad Transistors. Nano Res 5, 164171 (2012).Google Scholar
Zeng, Z. Y. et al. Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template. Adv Mater 24, 41384142 (2012).Google Scholar
Castro, E. V. et al. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect. Phys Rev Lett 99, 216802 (2007).Google Scholar
Zhang, Y. B. et al. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene. Nature 459, 820823 (2009).Google Scholar
Yu, W. J. et al. Toward Tunable Band Gap and Tunable Dirac Point in Bilayer Graphene with Molecular Doping. Nano Lett 11, 47594763 (2011).Google Scholar
Yu, W. J., and Duan, X. F. Tunable Transport Gap in Narrow Bilayer Graphene Nanoribbons. Sci Rep-Uk 3 (2013).Google Scholar
Xia, F. N. et al. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature. Nano Lett 10, 715718 (2010).Google Scholar
Shimizu, T. et al. Large Intrinsic Energy Bandgaps in Annealed Nanotube-Derived Graphene Nanoribbons. Nat Nanotechnol 6, 4550 (2011).Google Scholar
Mucciolo, E. R. et al. Conductance Quantization and Transport Gaps in Disordered Graphene Nanoribbons. Phys Rev B 79, 075407 (2009).Google Scholar
Areshkin, D. A. et al. Ballistic Transport in Graphene Nanostrips in the Presence of Disorder: Importance of Edge Effects. Nano Lett 7, 204210 (2006).Google Scholar
Lewenkopf, C. H. et al. Numerical Studies of Conductivity and Fano Factor in Disordered Graphene. Phys Rev B 77, 081410 (2008).Google Scholar
Sols, F. et al. Coulomb Blockade in Graphene Nanoribbons. Phys Rev Lett 99, 166803 (2007).Google Scholar
Özyilmaz, B. et al. Electronic Transport in Locally Gated Graphene Nanoconstrictions. Appl Phys Lett 91, 192107 (2007).Google Scholar
Han, M. Y. et al. Electron Transport in Disordered Graphene Nanoribbons. Phys Rev Lett 104, 056801 (2010).Google Scholar
Britnell, L. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science 335, 947950 (2012).Google Scholar
Georgiou, T. et al. Vertical Field-Effect Transistor Based on Graphene-WS2 Heterostructures for Flexible and Transparent Electronics. Nat Nanotechnol 8, 100103 (2013).Google Scholar
Yu, W. J. et al. Vertically Stacked Multi-Heterostructures of Layered Materials for Logic Transistors and Complementary Inverters. Nat Mater 12, 246252 (2013).CrossRefGoogle ScholarPubMed
Liu, Y. et al. Highly Flexible Electronics from Scalable Vertical Thin Film Transistors. Nano Lett 14, 14131418 (2014).CrossRefGoogle ScholarPubMed
Liu, Y. et al. High-Performance Organic Vertical Thin Film Transistor Using Graphene as a Tunable Contact. ACS Nano 9, 1110211108 (2015).Google Scholar
Yang, H. et al. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science 336, 11401143 (2012).Google Scholar
Liao, L. and Duan, X. F. Graphene–Dielectric Integration for Graphene Transistors. Mat Sci Eng Rev 70, 354370 (2010).Google Scholar
Moon, J. S. et al. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. IEEE Electr Device Lett 30, 650652 (2009).Google Scholar
Cheng, R. et al. High-Frequency Self-Aligned Graphene Transistors with Transferred Gate Stacks. Proc Natl Acad Sci USA 109, 1158811592 (2012).CrossRefGoogle ScholarPubMed
Lin, Y.-M. et al. Dual-Gate Graphene FETs with f(T) of 50 GHz. IEEE Electr Device L 31, 6870 (2010).Google Scholar
Wu, Y. Q. et al. State-of-the-Art Graphene High-Frequency Electronics. Nano Lett 12, 30623067 (2012).Google Scholar
Schwierz, F. Graphene Transistors: Status, Prospects, and Problems. Proc IEEE 101, 15671584 (2013).Google Scholar
Chauhan, J. and Guo, J. Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors. Nano Res 4, 571579 (2011).Google Scholar
Wu, Y. Q. et al. High-Frequency, Scaled Graphene Transistors on Diamond-Like Carbon. Nature 472, 7478 (2011).Google Scholar
Lin, Y. M. et al. Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology. IEEE Electr Device Lett 32, 13431345 (2011).Google Scholar
Chauhan, J. et al. A Computational Study of High-Frequency Behavior of Graphene Field-Effect Transistors. J Appl Phys 111, 094313(2012).Google Scholar
Koswatta, S. O. et al. Ultimate RF Performance Potential of Carbon Electronics. IEEE Trans Microw Theory 59, 27392750 (2011).Google Scholar
Zheng, J. X. et al. Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation. Sci Rep-Uk 3, 1314 (2013).Google Scholar
Wang, H. et al. Gigahertz Ambipolar Frequency Multiplier based on CVD Graphene. IEDM10–572 (2010).Google Scholar
Lin, Y. M. et al. Wafer-Scale Graphene Integrated Circuit. Science 332, 12941297 (2011).Google Scholar
Wang, H. Graphene Electronics for RF Applications. IEEE Microwave Mag 13, 114125 (2012).Google Scholar
Liao, L. et al. Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass. Nano Lett 12, 26532657 (2012).Google Scholar
Han, S. J. et al. Graphene Radio Frequency Receiver Integrated Circuit. Nat Commun 5, 17649 (2014).Google Scholar
Ci, L. et al. Controlled Nanocutting of Graphene. Nano Res 1, 116122 (2008).Google Scholar
Cai, J. M. et al. Atomically Precise Bottom-Up Fabrication of Graphene Nanoribbons. Nature 466, 470473 (2010).Google Scholar
Chen, Y. C. et al. Molecular Bandgap Engineering of Bottom-up Synthesized Graphene Nanoribbon Heterojunctions. Nat Nanotechnol 10, 156160 (2015).Google Scholar
Barone, V., Hod, O., and Scuseria, G. E. Electronic Structure and Stability of Semiconducting Graphene Nanoribbons. Nano Lett 6, 27482754 (2006).CrossRefGoogle ScholarPubMed
Kosynkin, D. V. et al. Longitudinal Unzipping of Carbon Nanotubes to Form Graphene Nanoribbons. Nature 458, 872875 (2009).Google Scholar
Cai, J. M. et al. Graphene Nanoribbon Heterojunctions. Nat Nanotechnol 9, 896900 (2014).Google Scholar
Jiao, L. et al. Facile Synthesis of High-Quality Graphene Nanoribbons. Nat Nanotechnol 5, 321325 (2010).Google Scholar
Wang, X. R. et al. Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors. Phys Rev Lett 100, 206803 (2008).Google Scholar
Lopata, K. et al. Graphene Nanomeshes: Onset of Conduction Band Gaps. Chem Phys Lett 498, 334337 (2010).CrossRefGoogle Scholar
Liu, X. et al. Graphene Nanomesh Photodetector with Effective Charge Tunnelling from Quantum Dots. Nanoscale 7, 42424249 (2015).Google Scholar
Cheng, R. et al. Few-Layer Molybdenum Disulfide Transistors and Circuits for High-Speed Flexible Electronics. Nat Commun 5 (2014).Google Scholar
Li, L. K. et al. Black Phosphorus Field-Effect Transistors. Nat Nanotechnol 9, 372377 (2014).Google Scholar

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