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ZnO/PS/p-Si heterojunction properties

  • Uday Muhsin Nayef (a1), Mohammed Waleed Muayad (a1) and Haider Amer Khalaf (a1)

Abstract

In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.

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ZnO/PS/p-Si heterojunction properties

  • Uday Muhsin Nayef (a1), Mohammed Waleed Muayad (a1) and Haider Amer Khalaf (a1)

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