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Theory of cutoff temperature of operation of uncooled semiconductor laser diode

Published online by Cambridge University Press:  26 March 2010

M. S. Ab-Rahman  and
M. R. Hassan
M. S. Ab-Rahman
Affiliation:
Computer & Network Security Research Group, Faculty of Engineering & Built Environment, Department of Electrical, Electronic and Systems Engineering, University kebangsaan Malaysia (UKM) (National University of Malaysia), 43600 Bangi, Selangor, Malaysia
M. R. Hassan*
Affiliation:
Computer & Network Security Research Group, Faculty of Engineering & Built Environment, Department of Electrical, Electronic and Systems Engineering, University kebangsaan Malaysia (UKM) (National University of Malaysia), 43600 Bangi, Selangor, Malaysia
*
mrhassan75@yahoo.com
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Abstract

In this paper, the authors present a new theory that can be applied to predetermine the value of cutoff temperature of operation (Tcutoff) of uncooled semiconductor laser diodes. Tcutoff is defined as the value of temperature of operation above which, the turn-on time delay ton of uncooled SLD will exceed the bit time interval of the injected pulse and results in an inoperable case. An analytical model is derived to represent the temperature dependence of ton. This model is used to derive an accurate one for Tcutoff and in terms of laser cavity parameters. Simulation results show that Tcutoff can be increased (improved) by increasing the injection current or biasing the uncooled SLD near threshold. The benefit of this study is that the designer could predetermine previously the requirements that should be taken into account, when considering of uncooled SLD in high-speed optical communication systems.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 50 , Issue 2 , May 2010 , 20301
Copyright
© EDP Sciences, 2010

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References

Hassan, M.R., Eur. Phys. J. Appl. Phys. 41, 41 (2008) CrossRef
Morgado, J.A.P., Cartaxo, A.V.T., IEE Proc. Optoelectron. 152, 49 (2005) CrossRef
Zhang, X.X., Panb, W., Chenc, J.G., Zhang, H., Opt. Laser Technol. 39, 997 (2007) CrossRef
G.P. Agrawal, N.K. Dutta, Long-wavelength semiconductor lasers (Van Nostrand Reinhold, New York, 1986)
M. Ming, K. Liu, Principles and applications of optical communication (The McGraw-Hill Companies, Inc., 1996)
Morgado, J.P., Cartaxo, A.T., IEEE J. Select. Topic Quant. Electron. 9, 1315 (2003) CrossRef
Curter, D.M., Lau, K.Y., IEEE Photon. Technol. Lett. 7, 4 (1995)
G.P. Agrawal, Fiber-Optic Communications Systems (John Wiley & Sons, Inc., 2002)
G.P. Agrawal, Lightwave technology telecommunication systems (John Wiley & Sons, Inc., (2005)
Chi H. Lee, Microwave photonics (Taylor & Francis Group, LLC, 2007)
L.A. Coldren, S.W. Corzine, Diode lasers and photonic integrated circuits (Wiley, New York, 1995)
Adolfsson, G., Wang, S., Sadeghi, M., Bengtsson, J., Larsson, A., Lim, J.J., Vilokkinen, V., Melanen, P., IEEE J. Quant. Electron. 44, 607 (2008) CrossRef
Stolz, C.A., Labukhin, D., Zakhleniuk, N., Adams, M.J., IET Optoelectron. 2, 223 (2008) CrossRef
Piprek, J., White, J.K., Thorpe, A.J.S., IEEE J. Quant. Electon. 38, 1253 (2002) CrossRef
Lo, B.S.K., Ghafouri-Shiraz, H., J. Lightw. Technol. 13, 200 (1995) CrossRef