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Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

  • E. Ozturk (a1), M. K. Bahar (a1) and I. Sokmen (a2)

Abstract

For a uniform distribution we have theoretically studied the subband structure of p-type δ-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the δ-doping concentration and the layer thickness. The electronic properties such as the depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrödinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.

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