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Subband structure and band bending in symmetric modulation-doped double quantum wells

  • F. Ungan (a1), E. Ozturk (a1), Y. Ergun (a1) and I. Sokmen (a2)

Abstract

We have calculated the subband structure and confinement potential of modulation-doped Ga $_{1-x}$ Al x As-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrödinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.

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Keywords

Subband structure and band bending in symmetric modulation-doped double quantum wells

  • F. Ungan (a1), E. Ozturk (a1), Y. Ergun (a1) and I. Sokmen (a2)

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