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A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet
Published online by Cambridge University Press: 15 January 1999
Abstract
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.
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- © EDP Sciences, 1999
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