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Simulation of mesa structures for III-V semiconductors under ion beam etching

Published online by Cambridge University Press:  15 June 1999

L. Houlet ,
A. Rhallabi  and
G. Turban
L. Houlet
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes (UMR 6502 du CNRS), Université de Nantes, B.P. 32229, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
A. Rhallabi*
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes (UMR 6502 du CNRS), Université de Nantes, B.P. 32229, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
G. Turban
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes (UMR 6502 du CNRS), Université de Nantes, B.P. 32229, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
*
arhallab@ireste.fr
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Abstract

An argon Ion Beam Etching (IBE) simulation model has been developed to investigate the mesa profile evolution in III-V semiconductors' technology. Particular attention has been focused on the sputtering yield angular dependence effect, on the influence of the material and 2D-morphology of the mask onto the pattern transfer. Experimental sputtering yield versus ion incidence angle is injected into the simulation model. The equations which govern the surface evolution, stem from the current method of characteristics. The simulated profiles show that the trenching phenomenon can appear by only considering the variation of the sputtering yield versus the etched surface canting. This is obtained when neither the ion reflection nor the electric field line deviation are taken into account. On the other hand, the slope transfer from the mask to the GaAs and InP substrates is studied.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 6 , Issue 3 , June 1999 , pp. 273 - 280
Copyright
© EDP Sciences, 1999

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