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Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

  • R. Bourguiga (a1) (a2), F. Garnier (a3), G. Horowitz (a3), R. Hajlaoui (a3), P. Delannoy (a4), M. Hajlaoui (a2) and H. Bouchriha (a2)...

Abstract

Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps.

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Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

  • R. Bourguiga (a1) (a2), F. Garnier (a3), G. Horowitz (a3), R. Hajlaoui (a3), P. Delannoy (a4), M. Hajlaoui (a2) and H. Bouchriha (a2)...

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