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Research of carrier mobility in NPD through negative differential susceptance spectra

  • Hui Xu (a1), Chao Tang (a1), Wen-Juan Zhai (a1), Rui-Lan Liu (a1) (a2), Zhou Rong (a1) (a2), Qu-Li Fan (a1) and Wei Huang (a1)...

Abstract

In this paper, the hole carrier mobility of organic semiconductor N,N′-diphenyl-N,N′bis(1,1′-biphenyl)-4,4′-diamine (NPD) was researched by negative differential susceptance spectra (−ΔB = −w(C − Cgeo) ~ f). Under the condition of space charge limited current (SCLC), through solving the drift current equation and Poisson equation and simulating the spectra −ΔB = −w(C − Cgeo) ~ f, the relationship between the peak of −ΔB = −w(C − Cgeo) ~ f spectra (1/ƒp = τp) and the transfer time of carrier (τdc) could be achieved to be τdc = k × τp. So the hole-only device of ITO/NPD/Ag was fabricated to determine the capacitance spectra, and through which its −ΔB = −w(C − Cgeo) ~ f could be plotted. According to the relationship of τdc = k × τp, where k was determined to be 0.56, the transfer time and further the carrier mobility could be obtained. The carrier mobility depended on the electric field according to Poole-Frenkel model was further investigated in this report.

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Research of carrier mobility in NPD through negative differential susceptance spectra

  • Hui Xu (a1), Chao Tang (a1), Wen-Juan Zhai (a1), Rui-Lan Liu (a1) (a2), Zhou Rong (a1) (a2), Qu-Li Fan (a1) and Wei Huang (a1)...

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