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Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Published online by Cambridge University Press:  27 August 2013

Eun Hye Lee ,
Su Woong Lee ,
Young Ju Eom ,
Hae Na Won ,
Jin Jang ,
Byeong Yeon Moon  and
Kyu Chang Park
Eun Hye Lee
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Su Woong Lee
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Young Ju Eom
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Hae Na Won
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Jin Jang
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Byeong Yeon Moon
Affiliation:
Department of Optometry, Kangwon National University, Samcheok, Gangwondo 245-907, Korea
Kyu Chang Park*
Affiliation:
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
*
a e-mail: kyupark@khu.ac.kr
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Abstract

The crystallization of amorphous silicon thin films by electron beam exposure was studied. Amorphous silicon and silicon dioxide layers were deposited on glass substrate by PECVD at 360 °C. The optimization to crystallize 300 nm thick amorphous silicon film was carried out at a RF power of 300 W, DC voltage of 1500 V, Argon gas flow rate of 3 sccm and a distance between electron beam mesh and sample of 40 mm. High quality nano-crystalline silicon films with an activation energy of 0.47 eV from conductivity, a grain size of 15–45 nm from SEM and Raman crystalline volume fraction of 93.1% were fabricated. We expect that e-beam exposure will be applied to crystallization of amorphous silicon films.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 63 , Issue 2 , August 2013 , 20302
Copyright
© EDP Sciences, 2013

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References

Bui, V.D., Bonnassieux, Y., Parey, J.Y., Djeridane, Y., Abramov, A., Roca, P., Cabarrocas, I., Kim, H.J., SID ’06 Digest 37, 204 (2006)CrossRef
Sameshima, T., Hara, M., Usui, S., Jpn J. Appl. Phys. 28, 1789 (1989)CrossRef
Mackenzic, K.D., Hanna, J., Eggant, Y.R., Li, Y.M., Sun, Z.L., Paul, W., J. Non-Cryst. Solids 77, 881 (1985)CrossRef
Sameshima, T., Usui, S., Mater. Res. Soc. Symp. Proc. 71, 435 (1986)CrossRef
Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S., Hotta, K., IEEE Trans. Elec. Dev. 36, 2868 (1989)CrossRef
Shirai, H., Fukai, C., Sakuma, Y., Moriya, Y., J. Non-Cryst. Solids 266–269, 131 (2000)CrossRef
Sameshima, T., Usui, S., Tomita, H., Jpn J. Appl. Phys. 26, L1678 (1987)CrossRef
Nygren, E., Pogany, A.P., Short, K.T., Williams, J.S., Elliman, R.G., Poate, J.M., Appl. Phys. Lett. 52, 439 (1988)CrossRef
Yoon, S.Y., Choi, J.H., Kim, H.C., Oh, J.Y., Kim, C.S., Pietruszko, S.M., Kim, C.O., Jang, J., Proc. AM-LCD ’97, 223 (1997)
Park, K.C., Lee, J.H., Song, I.H., Jung, S.H., Han, M.K., J. Non-Cryst. Solids 299–302, 1330 (2002)CrossRef
Masaki, Y., LeComber, P.G., Fitzgerald, A.G., J. Appl. Phys. 74, 129 (1993)CrossRef
King, T.J., Saraswat, K.C., IEEE Elec. Dev. Lett. 13, 309 (1992)CrossRef
McMahon, R.A., Hasko, D.G., Ahmed, H., Rev. Sci. Instrum. 56, 1257 (1985)CrossRef
Sedgwick, T.O., J. Electrochem. Soc. 130, 484 (1983)CrossRef
Choi, J.H., Kim, C.S., Lim, B.C., Jang, J., IEEE Trans. Elec. Dev. 45, 2074 (1998)CrossRef
Jang, J., Kim, K.M., Cho, K.S., Choo, B.K., Um, G., IEEE Elec. Dev. Lett. 24, 78 (2003)CrossRef
Kim, J.C., Choi, J.H., Kim, S.S., Jang, J., IEEE Elec. Dev. Lett. 25, 182 (2004)CrossRef
Morales, M., Leconte, Y., Rizk, R., Chateigner, D., J. Appl. Phys. 97, 034307 (2004)CrossRef
Yue, G., Lorentzen, J.D., Lin, J., Han, D., Wang, Q., Appl. Phys. Lett. 75, 492 (1999)CrossRef
Song, D., Inns, D., Straub, A., Terry, M.L., Campbell, P., Aberle, A.G., Thin Solid Films 513, 356 (2006)CrossRef
Cheng, Q., Xu, S., Long, J., Huang, S., Guo, J., Nanotechnology 18, 465601 (2007)CrossRef
Stuke, J., J. Non-Cryst. Solids 97–98, 1 (1987)CrossRef
Yoon, J.H., J. Non-Cryst. Solids 353, 4223 (2007)CrossRef
Das, U.K., Chaudhuri, P., Kshirsagar, S.T., J. Appl. Phys. 8O, 5389 (1996)CrossRef
Moore, C.A., Rocca, J.J., Johnson, T., Collins, G.J., Russell, P.E., Appl. Phys. Lett. 43, 290 (1983)CrossRef
Cullis, A.G., Rep. Prog. Phys. 48, 1155 (1985)CrossRef
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H., Odi, S.P., Teo, K.B.K., Milne, W.I., Curr. Appl. Phys. 6, 503 (2006)CrossRef
McMahon, R.A., Microele. Eng. 8, 255 (1988)CrossRef