Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-13T20:23:37.031Z Has data issue: false hasContentIssue false
  • English
  • Français

Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges

Published online by Cambridge University Press:  25 May 2006

M. Bedjaoui ,
B. Despax ,
M. Caumont  and
C. Bonafos
M. Bedjaoui*
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
B. Despax
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
M. Caumont
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
C. Bonafos
Affiliation:
CEMES, 29 rue J. Marvig, 31055 Toulouse, France
*
bedjaoui@lget.ups-tlse.fr
Get access

Abstract

In this work is presented a detailed physicochemical, structural and optical characterization of SiOxNy thin films. The films deposited using PECVD in SiH4-N2O-He discharges were thermally annealed at 1273 K for 1 hour in ambient nitrogen. The film stochiometry was measured by Rutherford Backscattering Spectroscopy. The chemical composition was dominated by silicon suboxide containing some Si-N and Si-H bonds. Raman scattering measurements suggest the formation of nanocrystallite silicon in the annealed films. The Raman observation is strongly supported by Transmission Electron Microscopy analysis which shows a high density of silicon nanocrystals, having a mean radius ranging between 3 and 6 nm. Using Spectroscopic Ellipsometry, we discussed the dielectric function evolution as a function of the deposition parameters.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 34 , Issue 2: 15th International Colloquium on Plasma processes (CIP 2005) , May 2006 , pp. 147 - 150
Copyright
© EDP Sciences, 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Iacona, F., Franzo, G., Spinella, C., J. Appl. Phys. 87, 1295 (2000) CrossRef
Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Ben Assayag, G., Claverie, A., Muller, T., Heinig, K.H., Perego, M., Fanciulli, M., Dimitrakis, P., Normand, P., J. Appl. Phys. 95, 5696 (2004) CrossRef
Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990) CrossRef
Edelberg, E., Bergh, S., Naone, R., Hall, M., Aydil, E.S., J. Appl. Phys. 81, 2410 (1997) CrossRef
Radouane, K., Date, L., Yousfi, M., Despax, B., Caquineau, H., J. Phys. D 33, 1332 (2000) CrossRef
Ay, F., Aydinli, A., Opt. Mater. 26, 33 (2004) CrossRef
Lucovsky, G., Mantini, M.J., Srivastava, J.K., Irene, E.A., J. Vac. Sci. Technol. B 5, 530 (1989) CrossRef
San Andréas, E., del Prado, A., Martil, I., Gonzalez-Diaz, G., Bravo, D., Lopez, F., Fernandez, M., Bohne, M., Rohrich, J., Selle, B., Sieber, I., J. Appl. Phys. 94, 7462 (2003) CrossRef
Ribeiro, M., Pereyra, I., Alayo, M.I., Thin Solid Films 426, 200 (2003) CrossRef
Wang, Y.Q., Wang, Y.G., Cao, L., Cao, Z.X., Appl. Phys. Lett. 83, 3474 (2003) CrossRef
Zi, J., Busscher, H., Ludwing, W., Zhang, K., Xie, X., Appl. Phys. Lett. 69, 200 (1996) CrossRef
Viera, G., Huet, S., Boufendi, L., J. Appl. Phys. 90, 4175 (2001) CrossRef
Fourouhi, A.R., Bloomer, I., Phys. Rev. B 34, 7018 (1986) CrossRef
Bruggeman, A.G., Ann. Phys. Leipzig 24, 636 (1935) CrossRef
Jellison Jr, G.E.., Opt. Mater. 1, 41 (1992) CrossRef
Jellison Jr, G.E.., M.F. Chisholm, S.M. Gorbatkin, Appl. Phys. Lett 62, 3348 (1993) CrossRef
Charvet, S., Madelon, R., Gourbilleau, F., Rizk, R., J. Appl. Phys. 85, 4032 (1999) CrossRef
Amans, D., Callard, S., Gagnaire, A., Joseph, J., Ledoux, G., Huisken, F., J. Appl. Phys. 81, 4173 (2003) CrossRef
Adachi, S., Phys. Rev. B 38, 12966 (1988) CrossRef
B. Gallas, Chih-Cheng Kao, C. Defranoux, S. Fisson, G. Vuye, J. Rivory, Thin Solid Films 455–456, 335 (2004)