Skip to main content Accessibility help
×
Home

Origin of the photoluminescence shifts in porous silicon*

  • H. Elhouichet (a1), B. Bessaïs (a1), O. Ben Younes (a2), H. Ezzaouia (a1) and M. Oueslati (a2)...

Abstract

The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a quantum confinement – based model, in which we modelize the PS layer as a mixture of quantum dots and wires. It was shown that a PL blueshift or redshift may occur during laser irradiation of PS, depending on preparation conditions. No PL shift was observed for some PS samples, even after a long ageing in air, due to the presence of an amorphous silicon phase detected from Raman spectroscopy measurements. It was found that the presence of the amorphous phase plays an important role in the PL behaviour of oxidised PS.

Copyright

References

Hide All

* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux" held at Hammamet the 8, 9 and 10 November 1996.

Keywords

Related content

Powered by UNSILO

Origin of the photoluminescence shifts in porous silicon*

  • H. Elhouichet (a1), B. Bessaïs (a1), O. Ben Younes (a2), H. Ezzaouia (a1) and M. Oueslati (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.