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Orientation control of rhomboedral PZT thin films on Pt/Ti/SiO2/Si substrates

Published online by Cambridge University Press:  15 September 2001

B. Vilquin ,
R. Bouregba ,
G. Poullain ,
M. Hervieu  and
H. Murray
B. Vilquin*
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
R. Bouregba
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
G. Poullain
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
M. Hervieu
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
H. Murray
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
*
bertrand.vilquin@ismra.fr
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Abstract

Highly (111)- and (001)-oriented rhomboedral PZT thin films have been grown at 500 °C on platinized silicon substrates by in situ RF magnetron sputtering. Crystallization of the perovskite phase was possible provided that a thin TiOx buffer layer was deposited prior to the PZT. Control of PZT films orientation is demonstrated by changing the $\rm O_2/(Ar+O_2)$ ratio in the plasma gas during the TiOx sputtering and its consequences on electrical properties of the ferroelectric samples are presented. The structural properties of the TiOx buffer layer were studied by means of transmission electronic microscopy in order to understand the relation between the TiOx seeding and the orientation control of the PZT film.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 15 , Issue 3 , September 2001 , pp. 153 - 165
Copyright
© EDP Sciences, 2001

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References

Scott, J.F., Araujo, C.A., Science 246, 1400 (1989). CrossRefPubMed
Swartz, S.L., Wood, V.E., Cond. Mat. News 1, 4 (1992).
Takayama, R., Tomita, Y., J. Appl. Phys. 65, 1666 (1989). CrossRef
Sreenivas, K., Sayer, M., J. Appl. Phys. 64, 1484 (1988). CrossRef
Foster, C.M., Bai, G.R., Csencsits, R., Vetrone, J., Jammy, R., Wills, L.A., Carr, E., Amano, J., J. Appl. Phys. 81, 2349 (1997). CrossRef
Du, X., Zheng, J., Belegundu, U., Uchino, K., Appl. Phys. Lett. 72, 2421 (1998). CrossRef
Jenkins, D.F.L., Clegg, W.W., Velu, G., Cattan, E., Remiens, D., Ferroelectrics 224, 259 (1999). CrossRef
Aoki, K., Fukuda, Y., Numuta, K., Nishimura, A., Jpn J. Appl. Phys. 33, 5155 (1994). CrossRef
Muralt, P., Maeder, T., Sagalowicz, L., Hiboux, S., Scalese, S., Naumovic, D., Agostino, R.G., Xanthopoulos, N., Mathieu, H.J., Patthey, L., Bullock, E.L., J. Appl. Phys. 83, 3835 (1998). CrossRef
Huang, Z., Zhang, Q., Whatmore, R.W., J. Mater. Sci. Lett. 17, 1157 (1998). CrossRef
Bouregba, R., Poullain, G., Vilquin, B., Murray, H., Mater. Res. Bull. 35, 1381 (2000). CrossRef
Magneli, A., Acta Cryst. 6, 495 (1953).
Anderson, S., Acta Scand. 14, 1161 (1960).
Iwasaki, H., Bright, N.F.M., Rowland, J.F., J. Less-Common Met. 17, 99 (1969). CrossRef
Larsen, P.K., Dormans, G.J.M., Taylor, D.J., van Veldhoven, P.J., J. Appl. Phys. 76, 2405 (1994). CrossRef