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Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed

Published online by Cambridge University Press:  15 July 2004

H. W. Kunert ,
D. Dale ,
L. C. Prinsloo ,
M. Hayes ,
J. Barnas ,
J. B. Malherbe ,
D. J. Brink ,
A. I. Machatine  and
K. M. Haile
H. W. Kunert*
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
D. Dale
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
L. C. Prinsloo
Affiliation:
Department of Chemistry, University of Pretoria, 0001 Pretoria, South Africa
M. Hayes
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
J. Barnas
Affiliation:
Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61 614 Poznan, Poland
J. B. Malherbe
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
D. J. Brink
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
A. I. Machatine
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
K. M. Haile
Affiliation:
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
*
hkunert@nsnper1.up.ac.za
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Abstract

Two samples, GaN silicon-doped and GaN magnesium-doped, were hydrogen implanted and annealed. The low temperature photoluminescence and inelastic light scattering spectroscopy were employed to investigate structural changes as well as the changes in optical electronic transitions.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 267 - 270
Copyright
© EDP Sciences, 2004

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References

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