Article contents
Nonlinear diffusion in excited Si crystals
Published online by Cambridge University Press: 21 December 2004
Abstract
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on the time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann's distribution of the excited vacancies or impurity atoms in solids. This model was used for approximation of very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 29 , Issue 2 , February 2005 , pp. 127 - 131
- Copyright
- © EDP Sciences, 2005
References
- 8
- Cited by