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Negative mobility dependence in polythiophenes P3OT and P3HT evidenced by the charge extraction by linearly increasing voltage method *

Published online by Cambridge University Press:  07 February 2007

V. Kažukauskas*
Affiliation:
Department of Semiconductor Physics and Institute of Materials Science and Applied Research, Vilnius University, Saultekio 9, 10222 Vilnius, Lithuania
M. Pranaitis
Affiliation:
Department of Semiconductor Physics and Institute of Materials Science and Applied Research, Vilnius University, Saultekio 9, 10222 Vilnius, Lithuania
V. Čyras
Affiliation:
Department of Semiconductor Physics and Institute of Materials Science and Applied Research, Vilnius University, Saultekio 9, 10222 Vilnius, Lithuania
L. Sicot
Affiliation:
DRT-LITEN-DSEN-GENEC-L2C, bât. 451, CEA Saclay, 91191 Gif-sur-Yvette, France
F. Kajzar
Affiliation:
DRT-LITEN-DSEN-GENEC-L2C, bât. 451, CEA Saclay, 91191 Gif-sur-Yvette, France
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Abstract

We investigated mobility in the regioregular poly(3-octylthiophene) (RR-P3OT) and regioregular poly(3-hexylthiophene) (RR-P3HT) by the Charge Extraction by Linearly Increasing Voltage method (CELIV). The samples were produced by the drop-casting and spin-coating methods on the Indium-Tin-Oxide substrate and provided with Al contacts. In both materials we had observed the “negative” mobility dependence at low electric fields, i.e., the mobility used to decrease with increasing electric field (in P3HT, this was only observed here in the drop-casted sample). Such behaviour was never observed by CELIV in P3OT before. Data were analysed within the Poole-Frenkel and Gaussian disorder models. The higher energetic disorder parameters were obtained in P3OT as compared to P3HT. This could be related to the longer side-chains of P3OT. We had demonstrated that in both materials with increasing temperature conductivity grows due to the thermally activated mobility.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2007

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Footnotes

*

This paper has been presented at “ECHOS06”, Paris, 28–30 juin 2006.

References

P.M. Borsenberger, D.S. Weiss, Organic Photoreceptors for Xerography (Dekker, New York, 1998)
Juška, G., Genevičius, K., Vili, M. $\bar{\rm u}$ nas, K. Arlauskas, R. Österbacka, H. Stubb, Proc. SPIE 4415, 145 (2001) CrossRef
Juška, G., Arlauskas, K., Vili, M. $\bar{\rm u}$ nas, J. Kočka, Phys. Rev. Lett. 84, 4946 (2000) CrossRef
Juška, G., Arlauskas, K., Vili, M. $\bar{\rm u}$ nas, K. Genevičius, R. Osterbacka, H. Stubb, Phys. Rev. B 62, R16235 (2000) CrossRef
Juška, G., Vili, M. $\bar{\rm u}$ nas, K. Arlauskas, N. Nekrašas, N. Wyrsch, L. Feitknecht, J. Appl. Phys. 89, 4971 (2001) CrossRef
G. Juška, N. Nekrašas, K. Genevičius, J. Stuchlik, J. Kočka, Thin Solid Films 451, 452, 290 (2004)
M.A. Lampert, P. Mark, Current Injection in Solids (Academic, New York, 1970)
Geens, W., Shaheen, S.E., Wessling, B., Brabec, C.J., Poortmans, J., Sariciftci, N.S., Org. Electron. 3, 105 (2002) CrossRef
W. Geens, T. Martens, J. Poortmans, T. Aernouts, J. Manca, L. Lutsen, P. Heremans, S. Borghs, R. Mertens, D. Vanderzande, Thin Solid Films 451, 452, 498 (2004)
Poplavskyy, D., Nelson, J., J. Appl. Phys. 93, 341 (2003) CrossRef
Mozer, A.J., Sariciftci, N.S., Chem. Phys. Lett. 389, 438 (2004) CrossRef
Mozer, A.J., Sariciftci, N.S., Pivrikas, A., Österbacka, R., Juška, G., Brassat, L., Bässler, H., Phys. Rev. B 71, 035214 (2005) CrossRef
Gill, W.D., J. Appl. Phys. 43, 5033 (1972) CrossRef
Baessler, H., Phys. Status Solidi B 175, 15 (1993) CrossRef
Dunlap, D.H., Parris, P.E., Kenkre, V.M., Phys. Rev. Lett. 77, 542 (1996) CrossRef
Novikov, S.V., Dunlap, D.H., Kenkre, V.M., Parris, P.E., Vannikov, A.V., Phys. Rev. Lett. 81, 4472 (1998) CrossRef
Dunlap, D.H., Kenkre, V.M., Parris, P.E., J. Imaging Sci. Techn. 43, 437 (1999)
B.I. Shklovskii, A.L. Efros, Electronic properties of doped semiconductors (Nauka, Moscow, 1979) (in Russian)
Van Lien, N., Shklovskii, B.I., Solid State Commun. 38, 99 (1981) CrossRef
Levin, E.I., Shklovskii, B.I., Solid State Commun. 67, 233 (1988) CrossRef
Blom, P.W.M., Vissenberg, M.C.J.M., Mat. Sci. Eng. 27, 53 (2000) CrossRef
Bruetting, W., Berleb, S., Mueckl, A.G., Org. Electron. 2, 1 (2001) CrossRef
Hertel, D., Baessler, H., Scherf, U., Hoerhold, H.H., J. Chem. Phys. 110, 9214 (1999) CrossRef
Im, C., Baessler, H., Rost, H., Hoerhold, H.H., J. Chem. Phys. 113, 3802 (2000) CrossRef