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Multiple tunnel junctions based nanowire photodetector model for single charge detection

Published online by Cambridge University Press:  05 July 2013

Samir Chatbouri ,
A. Touati ,
M. Troudi ,
N. Sghaier  and
A. Kalboussi
Samir Chatbouri*
Affiliation:
Laboratoire de Microélectronique et Instrumentation (UR/03/13-04), Faculté des Sciences de Monastir, Avenue de l’environnement, Université de Monastir, 5019 Monastir, Tunisia
A. Touati
Affiliation:
Laboratoire de Microélectronique et Instrumentation (UR/03/13-04), Faculté des Sciences de Monastir, Avenue de l’environnement, Université de Monastir, 5019 Monastir, Tunisia
M. Troudi
Affiliation:
Equipe composants électroniques (UR/99/13-22), Institut Préparatoire aux Etudes d’Ingénieurs de Nabeul (IPEIN), Université de Carthage, 8000 Merazka, Nabeul, Tunisia
N. Sghaier
Affiliation:
Equipe composants électroniques (UR/99/13-22), Institut Préparatoire aux Etudes d’Ingénieurs de Nabeul (IPEIN), Université de Carthage, 8000 Merazka, Nabeul, Tunisia
A. Kalboussi
Affiliation:
Laboratoire de Microélectronique et Instrumentation (UR/03/13-04), Faculté des Sciences de Monastir, Avenue de l’environnement, Université de Monastir, 5019 Monastir, Tunisia
*
a e-mail: samir.chatbouri@yahoo.com
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Abstract

In this paper we propose a new silicon nanowire photodetector model based on a single-electron transistor for single charge detection (photo-NWSET). In the first part of this work we present the two blocks of the device structure (reading and detection blocks). The presented model is consisting of two blocks capacitively coupled. The first SET (SET1) is supposed to read the charge whereas the detection block is represented by the nanowire (NW) system associated to an optical source. We modeled the NW by a series of seven islands separated by eight tunnel junctions (8TJs). In the second part of this work, we investigate the effects of photoexcitation on Id-Vg curves and we present results obtained on the output (photo-NWSET) characteristics after variation of power illumination and response time.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 63 , Issue 1: International Semiconductor Conference Dresden-Grenoble – ISCDG 2012 , July 2013 , 10101
Copyright
© EDP Sciences, 2013

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