Skip to main content Accessibility help
×
Home

Modeling of the spectral response of Al x Ga1−x N p-n junction photodetectors

  • M. Hanzaz (a1), A. Bouhdada (a1), E. Monroy (a2), E. Muñoz (a2), P. Gibart (a3) and F. Omnès (a3)...

Abstract

We propose to model the spectral response of p-n junction photodetectors based on gallium nitride and related AlGaN alloys. The model is based on the resolution of the differential equations that govern the excess carrier variation in each layer of the photodiode taking into account all the physical parameters, in particular the presence of deep trap levels in the forbidden gap. We notice that the theoretical results are in good agreement with the experiments. We have also analysed the effect of the recombination velocity at the illuminated surface, as well as the impact of the thickness and the doping density of the p-type layer (illuminated zone) on the spectral response magnitude.

Copyright

Corresponding author

References

Hide All
[1] Razeghi, M., Rogalski, A., J. Appl. Phys. 79, 7433 (1996).
[2] Carrano, J.C., Grudowski, P.A., Eiting, C.J., Dupuis, R.D., Campbell, J.C., Appl. Phys. Lett. 70, 1992 (1997).
[3] Chen, Q., Yang, J.W., Osinsky, A., Gangopâdhyay, S., Lim, B., Anwar, M.Z., Khan, M.A., Kuksenkov, D., Temkin, H., Appl. Phys. Lett. 70, 2277 (1997).
[4] Manasreh, M.O., Phys. Rev. B 53, 16425 (1996).
[5] Nakamura, S., Senoh, M., Wagahma, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).
[6] Nakamura, S., T. mukai, M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
[7] Chen, Q., Khan, M.A., Sun, C.J., Yang, J.W., Electron. Lett. 31, 1781 (1995).
[8] Zhang, X., Kung, P., Walker, D., Piotrowski, J., Rogalski, A., Saxler, A., Razeghi, M., Appl. Phys. Lett. 67, 2028 (1995).
[9] Walker, D., Zhang, X., Saxler, A., Kung, P., Xu, J., Razeghi, M., SPIE Vol. 2999, 267 (1997).
[10] Munoz, E., Monroy, E., Garrido, J.A., Izpura, I., Sanchez, F.J., Sanchez-Garcia, M.A., Calleja, E., Beaumont, B., Gibart, P., Appl. Phys. Lett. 71, 870 (1997).
[11] Binet, F., Duboz, J.Y., Laurent, N., Rosencher, E., Briot, O., Aulombard, R.L., J. Appl. Phys. 81, 6449 (1997).
[12] Götz, W., Johnson, N.M., Street, R.A., Amano, H., Akasaki, I., Appl. Phys. Lett. 66, 1340 (1995).

Keywords

Related content

Powered by UNSILO

Modeling of the spectral response of Al x Ga1−x N p-n junction photodetectors

  • M. Hanzaz (a1), A. Bouhdada (a1), E. Monroy (a2), E. Muñoz (a2), P. Gibart (a3) and F. Omnès (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.