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A model for the open circuit voltage relaxation in Cu(In,Ga)Se2 heterojunction solar cells

  • Th. Meyer (a1), M. Schmidt (a1), F. Engelhardt (a1), J. Parisi (a1) and U. Rau (a2)...

Abstract

This article investigates the electronic transport properties of ZnO/ CdS/ Cu(In,Ga)Se2 heterojunction solar cells during and after illumination or forward bias in the dark. We observe a relaxation of the open circuit voltage under constant illumination as well as a relaxation of the voltage drop over the device under constant forward bias current in the dark. Both phenomena are accompanied by an increase of the sample capacitance. We introduce a general quantitative model concept for the open circuit voltage relaxation and related effects in heterojunction devices that explains the phenomena as a consequence of the persistent capture of charge carriers within the space charge region. We apply our concept to develop a specific quantitative model for the observed metastablity in Cu(In,Ga)Se2 heterojunction solar cells.

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A model for the open circuit voltage relaxation in Cu(In,Ga)Se2 heterojunction solar cells

  • Th. Meyer (a1), M. Schmidt (a1), F. Engelhardt (a1), J. Parisi (a1) and U. Rau (a2)...

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