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Microstructure and morphology evolution in chemical solution deposited semiconductor films: 3. PbSe on GaAs vs. Si substrate

Published online by Cambridge University Press:  21 June 2005

M. Shandalov  and
Y. Golan
M. Shandalov
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Y. Golan*
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
*
ygolan@bgu.ac.il
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Abstract

The microstructure and morphology evolution in nanocrystalline PbSe films chemically deposited on GaAs(100) and GaAs(111) substrates were compared to PbSe films on Si(100) under the same conditions. On GaAs substrates, dense and continuous PbSe films were obtained. We show that the temperature dependent morphological changes on GaAs substrates occurred as a result of increased sample thickness due to higher reaction rates. Notably, the deposition of PbSe on Si(100) did not lead to continuous films and no preferred orientation was observed. The improved wetting between PbSe and GaAs appears to be a key factor responsible for the differences observed on the two substrates.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 31 , Issue 1 , July 2005 , pp. 27 - 30
Copyright
© EDP Sciences, 2005

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