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Low-voltage organic complementary inverters fabricated with pentacene/SrTiO3 and C60/SrTiO3 field-effect transistors

Published online by Cambridge University Press:  26 February 2013

Hu Yan ,
Hiroki Hanagata  and
Hidenori Okuzaki
Hu Yan*
Affiliation:
College of Chemistry and Molecular Engineering, Zhengzhou University, 100 Kexue Road, Zhengzhou 450001, P.R. China
Hiroki Hanagata
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
Hidenori Okuzaki*
Affiliation:
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
*
ae-mail: yanhu@zzu.edu.cn
be-mail: okuzaki@yamanashi.ac.jp
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Abstract

Organic complementary inverters were fabricated with low-voltage pentacene/SrTiO3 and C60/SrTiO3 field-effect transistors (FETs), without formation of self-assembled monolayer on surface of the dielectric SrTiO3. The inverters showed the highest gain of 18.4 at an operating voltage as low as 3 V, where the pentacene/SrTiO3 and C60/SrTiO3 FETs on the inverters showed hole and electron mobilities of 0.85 and 0.07 cm2/V s with threshold voltages (VT) of −1.1 and −0.2 V, respectively.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 61 , Issue 3 , March 2013 , 30201
Copyright
© EDP Sciences, 2013

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