Skip to main content Accessibility help
×
Home

Lateral conductivity in GaAs/InAs quantum dot structures

  • L. Dózsa (a1), A. L. Tóth (a1), Zs. J Horváth (a1), P. Hubík (a2), J. Krištofik (a2), J. J. Mareš (a2), E. Gombia (a3), R. Mosca (a3), S. Franchi (a3) and P. Frigeri (a3)...

Abstract

Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

Copyright

Corresponding author

References

Hide All
[1] Walther, C., Bollman, J., Kissel, H., Kirmse, H., Neumann, W., Masselink, W. T., Physica B 273–274, 971 (1999)
[2] Sobolev, M.M., Kovsh, A. R., Mstinov, V., Egorov, A. Yu, Zhukov, A.E., J. El. Mat. 28, 491 (1999)
[3] Kapteyn, C.M. A, Heinrichdorff, F., Stier, O., Heintz, R., Grundmann, M., Zakharov, N.D., Bimberg, D., Werner, P., Phys. Rev. B 60, 14265 (1999)
[4] Dózsa, L., Horváth, Zs. J., Van Tuyen, Vo, Pödör, B., Mohácsy, T., Franchi, S., Frigeri, P., Gombia, E., Mosca, R., Microel. Eng. 51–52, 85 (2000)
[5] Zs. J. Horváth, L. Dózsa, Vo Van Tuyen, B. Pödör, Á. Nemcsics, P. Frigeri, E. Gombia, R. Mosca, S. Franchi, Thin Solid Films 167, 89 (2000)
[6] Zs. J. Horváth, P. Frigeri, S. Franchi, Vo Van Tuyen, E. Gombia, R. Mosca, L. Dózsa, Appl. Surf. Sci 190, 222 (2002)
[7] Gombia, E., Mosca, E., Frigieri, P., Franchi, S., Amighetti, S., Ghezzi, C., Mater. Sci. Eng. B 91–92, 393 (2002)
[8] Dózsa, L., Horváth, Zs.J., Hubík, P., Krištofik, J., Mareš, J. J., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Pcz, B., Dobos, L., Phys. Stat. Sol. C 3, 975 (2003)
[9] Bosacchi, A., Frigeri, P., Franchi, S., Allegri, P., Avanzini, V., J. Cryst. Growth 175–176, 771 (1997)
[10] Dósa, L., Solid-State Electron. 35, 228 (1992)

Keywords

Lateral conductivity in GaAs/InAs quantum dot structures

  • L. Dózsa (a1), A. L. Tóth (a1), Zs. J Horváth (a1), P. Hubík (a2), J. Krištofik (a2), J. J. Mareš (a2), E. Gombia (a3), R. Mosca (a3), S. Franchi (a3) and P. Frigeri (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed