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A kinetic formulation of piezoresistance in N-type silicon: Application tonon-linear effects
Published online by Cambridge University Press: 15 July 1999
Abstract
This paper is devoted to the theoretical study of the influence of the temperature and of the doping on the piezoresistance of N-type silicon. In the first step the fractional change in the resistivity caused by stresses is calculated in the framework of a multivalley model using a kinetic transport formulation based on the Boltzmann transport equation. In the second step shifts in the minima of the conduction band and the resulting shift of the Fermi level are expressed in terms of deformation potentials and of stresses. General expressions for the fundamental linear, π11 and π12, and non-linear, π111, π112, π122 and π123, piezoresistance coefficients are then derived. Plots of the non-linear piezoresistance coefficients against the reduced shift of the Fermi level or against temperature allow us to characterize the influence of doping and temperature. Finally some attempts are made to estimate the non-linearity for heavily doped semiconductor gauges.
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- © EDP Sciences, 1999
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