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The interface optical phonon and electron-phonon interaction in GaN/AlN spherical heterostructures
Published online by Cambridge University Press: 19 June 2008
Abstract
Based on the dielectric-continuum model, the expression
of polarization eigenvector, the dispersion relations, and the
electron-phonon interaction Fröhlich-like Hamiltonian for interface
optical (IO) phonons in multilayer GaN/AlN spherical heterostructures are
obtained. As an application of the theory, the dispersion relations and
electron-phonon coupling function strengths of the IO phonons are calculated
for four-layer GaN/AlN/GaN/AlN spherical heterostructures. The results show
that the lower frequency phonons have a much greater contribution to the
coupling function $\Gamma _l^{IO} (r)$
than higher frequency phonons.
- Type
- Research Article
- Information
- Copyright
- © EDP Sciences, 2008
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