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Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

  • Mahmoud Daoudi (a1), Najla Khalifa (a1), Ines Dhifallah (a1) and Abdelkarim Ouerghi (a2)

Abstract

The quantum confined Stark effect (QCSE) has been investigated in detail in GaAs/AlGaAs and InAs/GaAs/AlGaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A power dependent photoluminescence (PL) study allowed to highlight the QCSE caused by the internal electric field in the GaAs channel then a piezoelectric field reinforce the red-shift. Increasing the Si-δ-doping leads to; first a red-shift then a blue shift at high excitation power due to the stabilize quantum well structures tendency and the saturation phenomenon. The HEMT band structures and the theoretical activated electron densities at 10 K have been studied using the finite difference method and the simultaneously solve of the Schrödinger and the Poisson equations written within the Hartree approximation.

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[1] Yinga, M., Xiab, Y.Y., Liuc, P.J., Liub, X.D., Zhaob, M.W., Wang, Z., Mater. Lett. 57, 2932 (2003)
[2] Jeganathan, K., Ramakrishnan, V., Kumar, J., Cryst. Res. Technol. 34, 1293 (1999)
[3] Meftaha, A., Ajlania, H., Alouloua, S., Oueslatia, M., Scalbertb, D., Allegreb, J., Maaref, H., J. Lumin. 128, 1317 (2008)
[4] Okamoto, K., Umezaki, T., Okada, T., Shinohara, R., Solid-State Electron. 38, 1335 (1995)
[5] Ossau, W., Kochereshko, V.P., Astakhov, G.V., Yakovlev, D.R., Landwehr, G., Wojtowicz, T., Karczewski, G., Kossut, J., Physica B 298, 315 (2001)
[6] Ferreira, E.C., da Costa, J.A.P., Freire, J.A.K., Fariae, G.A., Freirs, V.N., Appl. Surf. Sci. 190, 191 (2002)
[7] Cingolani, R., Botchkarev, A., Tang, H., Morkoc, H., Traetta, G., Coli, G., Lomascolo, M., Di Carlo, A., Della Sala, F., Lugli, P., Phys. Rev. B 61, 2711 (2000)
[8] Park, Y.S., Holmes, M.J., Kang, T.W., Taylor, R.A., Nanotechnology 21, 115401 (2010)
[9] Daoudi, M., Dhifallah, I., Ouerghi, A., Chtourou, R., Superlattices Microstruct. 51, 497 (2012)
[10] Aloulou, S., Ajlani, H., Meftah, A., Oueslati, M., Sfaxi, L., Maaref, H., Mater. Sci. Eng. B 96, 14 (2002)
[11] Dhifallah, I., Daoudi, M., Bardaoui, A., Ben Sedrine, N., Aloulou, S., Ouerghli, A., Chtourou, R., Physica E 42, 2134 (2010)
[12] Dhifallah, I., Aloulou, S., Bardaoui, A., Harmand, J.C., Chtourou, R., Eur. Phys. J. Appl. Phys. 47, 30302 (2009)
[13] Huang, C.T., Wu, J.D., Liu, C.F., Huang, Y.S., Wan, C.T., Su, Y.K., Tiong, K.K., J. Cryst. Growth 370, 182 (2013)
[14] Morhain, C., Bretagnon, T., Lefebvre, P., Tang, X., Valvin, P., Guillet, T., Gil, B., Taliercio, T., Teisseire-Doninelli, M., Vinter, B., Deparis, C., Phys. Rev. B 72, 241305 (2005)
[15] Huang, C.T., Wu, J.D., Liu, C.F., Huang, Y.S., Wan, C.T., Su, Y.K., Tiong, K.K., Mater. Chem. Phys. 134, 797 (2012)
[16] Riyopoulos, S., Nano. Res. Lett. 4, 993 (2009)
[17] Renard, J., Songmuang, R., Tourbot, G., Bougerol, C., Daudin, B., Gayral, B., Phys. Rev. B 80, 121305 (2009)
[18] Gotoh, H., Tawara, T., Kobayashi, Y., Kobayashi, N., Saitoh, T., Appl. Phys. Lett. 83, 4791 (2003)
[19] Ekenberg, U., Richards, D., Solid-State Electron. 37, 661 (1994)
[20] Chi, Y.-M., Shi, J.-J., J. Lumin. 128, 1836 (2008)
[21] Takeuchi, T., Wetzel, C., Yamaguchi, S., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., Yamada, N., Appl. Phys. Lett. 73, 1691 (1998)
[22] Dhifallaha, I., Daoudia, M., Bardaouia, A., Eljanic, B., Ouerghib, A., Chtouroua, R., J. Lumin. 131, 1007 (2011)
[23] Liang, Y.J., Chui, P.F., Sun, X., Zhao, Y., Cheng, F., Sun, K., J. Alloys Compd. 552, 289 (2013)
[24] Shen, J., Li, Z.Q., Chen, Y.R., Chen, X.H., Chen, Y.W., Sun, Z., Huang, S.M., Appl. Surf. Sci. 270, 712 (2013)
[25] Chen, J.Y., Chen, B.H., Huanga, Y.S., Chin, Y.C., Tsai, H.S., Linb, H.H., Tiong, K.K., J. Lumin. 136, 178 (2013)
[26] Yuksek, N.M., Gasanly, N.M., Aydinli, A., Ozkan, H., Acikgag, M., Cryst. Res. Technol. 39, 800 (2004)
[27] Lopes, E.M., Duarte, J.L., Pocas, L.C., Dias, I.F.L., Laureto, E., Quivy, A.A., Lamas, T.E., J. Lumin. 130, 460 (2010)

Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

  • Mahmoud Daoudi (a1), Najla Khalifa (a1), Ines Dhifallah (a1) and Abdelkarim Ouerghi (a2)

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