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FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps

Published online by Cambridge University Press:  15 July 2004

O. Palais ,
P. Hidalgo  and
S. Martinuzzi
O. Palais*
Affiliation:
Lab. TECSEN UMR 6122, University of Aix-Marseille III - Faculté des Sciences et Techniques 231, 13397 Marseille Cedex 20, France
P. Hidalgo
Affiliation:
Lab. TECSEN UMR 6122, University of Aix-Marseille III - Faculté des Sciences et Techniques 231, 13397 Marseille Cedex 20, France
S. Martinuzzi
Affiliation:
Lab. TECSEN UMR 6122, University of Aix-Marseille III - Faculté des Sciences et Techniques 231, 13397 Marseille Cedex 20, France
*
olivier.palais@univ.u-3mrs.fr
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Abstract

The kinetics of “metal-acceptor” pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB. It is found that the reassociation of the “metal-acceptor” pairs is fast immediately after the dissociation and then slows down for several days. The results allow the identification of mixed contamination by Cr and Fe.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 483 - 485
Copyright
© EDP Sciences, 2004

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