Skip to main content Accessibility help
×
Home

Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit

  • R. Bourguiga (a1), A. Oudir (a1), M. Mahdouani (a1), F. Pardo (a2) and J. L. Pelouard (a2)...

Abstract

An efficient technique for determining the small-signal equivalent-circuit model of a Metal collector-up Heterojunction Bipolar Transistor (C-up MHBT) is presented. The technique employs analytically derived expressions for direct calculation of HBT T-Model equivalent circuit element values in terms of the measured S-parameters. This approach avoids errors due to uncertainty in fitting to large, over determined equivalent circuits and does not require the use of test structures and extra measurement steps to evaluate parasitics. Physically realistic results are demonstrated under various biasing conditions for the n-p-n InP/InGaAs HBT with metallic collector up structure. The agreement between the measured and model-produced data is excellent over the large frequency range and for several polarizations conditions for devices.

Copyright

Corresponding author

References

Hide All
[1] Costa, D., Liu, W.L., Harris, J.S., IEEE Trans. Electron Devices 38, 2018 (1991)
[2] Pehlke, D.R., Pavlidis, D., IEEE Trans. Microwave Theory Tech. 40, 2367 (1992)
[3] S.J. Spiegel, D. Ritter, R.A. Hamm, A. Feygenson, P.R. Smith. Trans. Electron Devices 42 (1995)
[4] Wei, C.J., Huang, J.C.M., IEEE Trans. Microwave Theory Tech. 43, 2035 (1995)
[5] Sheinman, B., Wasige, E., Rudolph, M., Doerner, R., Sidorov, V., Cohen, S., Ritter, D., IEEE Trans. Microwave Theory Tech. 50, 2804 (2002)
[6] Sangsoo Ko, Kyungmin Koh, Hyun-Min Park Songcheol Hong, IEEE Trans. Electron Devices 49 (2002)
[7] Tzyy-Sheng Horng, Jian-Ming Wu, Hui-Hsiang Huang, IEEE Trans. Microwave Theory Tech. 49 (2001)
[8] H.Y. Chen, K.M Chen, G.W. Huang, C.Y. Chang, IEICE Trans. Electron. E88-C (2005)
[9] Jianjun Gao, Xiuping Li, Hong Yang, Hong Wang, Georg Boeck, IEEE Trans. Semicond. Manufact. 19 (2006)
[10] W.D. Martin, R.B. Colombo, IEEE Trans. Microwave Theory Tech. 51 (2003)
[11] M. Ida, K. Kurishima, N. Watanabe, IEICE Trans. Electron. E86-C, 1923 (2003)
[12] D. Yu, K. Lee, B. Kim, D. Ontiveros, K. Vargason, J.M. Kuo, Y.C. Kao, IEEE Electron Device Lett. 24 (2003)
[13] Hafez, W., Jie-Wei Lai, M. Feng, Electron. Lett. 39, 1475 (2003)
[14] Hafez, W., Feng, M., Appl. Phys. Lett. 86, 152101 (2005)
[15] J.L. Pelouard, N Matire, F. Pardo, J.L. Benchimol, F. Alexandre, IPRM Proc. 393 (1993)
[16] N. Matine, J.L. Pelourad, F. Pardo, R. Teissier, M. Pessa, IPRM Proc. 137 (1996)
[17] J.L. Pelouard, R. Teissier, N. Matine, F. Pardo, IPRM Proc. 169 (1997)
[18] S. Demichel, F. Pardo, R. Tessier, L. Goldstein, J.L. Pelouard, Proc. WOCSDICE, 113 (1999)
[19] Sotoodeh, M., Khalid, A.H., Sheng, H., Amin, F.A., Gokdemir, T., Rezazadeh, A.A., Knights, A.P., C.C. Button. IEEE Trans. Electron Devices 46, 1081 (1999)
[20] Kroemer, H., Proc. IEEE 70, 13 (1982)
[21] Laser, A.P., Pulfrey, D., IEEE Trans. Electron Devices 38, 1685 (1991)
[22] R.L. Pritchard, Electrical Characteristics of Transistors, (New York, McGraw Hill, 1967)

Keywords

Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit

  • R. Bourguiga (a1), A. Oudir (a1), M. Mahdouani (a1), F. Pardo (a2) and J. L. Pelouard (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed