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Evolution of photoluminescence life-times distribution in Si-QD/SiO2 multilayer films

  • Xinzhan Wang (a1), Yumei Liu (a1), Huina Feng (a1), Wanlei Dai (a1), Yanmei Xu (a1), Wei Yu (a1) and Guangsheng Fu (a1)...

Abstract

Si-rich oxide/SiO2 multilayer films with different N2O flow rates have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dot (Si-QD)/SiO2 multilayer films are obtained by 1100 °C annealing. Steady photoluminescence (PL) spectra show that the main optical emission mechanism changes from quantum confinement effect of Si-QDs to interface defect states with increasing the flow rate of N2O. Curve fittings of time-resolved PL spectra show that two log-normal decay time distribution bands are obtained, and both the most frequent life-times decrease with increasing the flow rate of N2O, while increase with the red shift of detecting wavelength. Analyses indicate that defect states density and size distribution of Si-QDs strongly influence the PL decay properties.

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[1]Cullis, A.G., Canham, L.T., Nature 353, 335 (1991)
[2]Hao, X.J., Cho, E.C., Flynn, C., Shen, Y.S., Park, S.C., Conibeer, G., Green, M.A., Sol. Energy Mater. Sol. Cells 93, 273 (2009)
[3]Lin, G.R., Lin, C.J., Lin, C.K., Opt. Express 15, 2555 (2007)
[4]Rui, Y., Li, S., Xu, J., Song, C., Jiang, X., Li, W., Chen, K., Wang, Q., Zuo, Y., J. Appl. Phys. 110, 064322 (2011)
[5]Wei, L.S., Chen, D.H., Small 5, 72 (2009)
[6]Zacharias, M., Heitmann, J., Scholz, R., Kahler, U., Schmidt, M., Blasing, J., Appl. Phys. Lett. 80, 661 (2002)
[7]Kanemitsu, Y., Okamoto, S., Otobe, M., Oda, S., Phys. Rev. B 55, R7375 (1997)
[8]Lin, G.R., Lin, C.J., Lin, C.K., Chou, L.J., Chueh, Y.L., J. Appl. Phys. 97, 094306 (2005)
[9]Qin, G.G., Li, Y.J., Phys. Rev. B 68, 85309 (2003)
[10]Hao, X.J., Podhorodecki, A.P., Shen, Y.S., Zatryb, G., Misiewicz, J., Green, M.A., Nanotechnology 20, 485703 (2009)
[11]Lin, Y.H., Wu, C.L., Pai, Y.H., Lin, G.R., Opt. Express 19, 6564 (2011)
[12]Wu, C.L., Lin, Y.H., Lin, G.R., IEEE J. Sel. Top. Quantum Electron. 18, 1643 (2012)
[13]Klein, T.M., Anderson, T.M., Chowdhury, A.I., Parsons, G.N., J. Vac. Sci. Technol. A 17, 108 (1999)
[14]Iacona, F., Franzo, G., Spinella, C., J. Appl. Phys. 87, 1295 (2000)
[15]Pai, P.G., Chao, S.S., Takagi, Y., Lucovsky, G., J. Vac. Sci. Technol. A 4, 689 (1986)
[16]Giuseppe, F., Santo, G., Pennisi, A.R., Carla, F., J. Appl. Phys. 109, 074311 (2011)
[17]Chang, G.R., Ma, F., Ma, D.Y., Xu, K.W., Nanotechnology 21, 465605 (2010)
[18]Allan, G., Delerue, C., Lannoo, M., Phys. Rev. Lett. 78, 3161 (1997)
[19]Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lebedev, O.I., Van Tendeloo, G., Moshchalkov, V.V., Nat. Nanotechnol. 3, 174 (2008)
[20]Bujdák, J., Czímerová, A., Arbeloa, F.L., J. Coll. Interf. Sci. 364, 497 (2011)
[21]Okamoto, K., Vyawahare, S., Scherer, A., J. Opt. Soc. Am. B 23, 1674 (2006)
[22]de Boer, W.D.A.M., Timmerman, D., Dohnalova, K., Yassievich, I.N., Zhang, H., Buma, W.J., Gregorkiewicz, T., Nat. Nanotechnol. 5, 878 (2010)
[23]Zatryb, G., Podhorodecki, A., Hao, X.J., Misiewicz, J., Shen, Y.S., Green, M.A., Opt. Express 18, 22004 (2010)
[24]Borrero-González, L.J., Nunes, L.A.O., Andreeta, M.R.B., Wojcik, J., Mascher, P., Pusep, Y.A., Comedi, D., Guimarães, F.E.G., J. Appl. Phys. 108, 013105 (2010)

Evolution of photoluminescence life-times distribution in Si-QD/SiO2 multilayer films

  • Xinzhan Wang (a1), Yumei Liu (a1), Huina Feng (a1), Wanlei Dai (a1), Yanmei Xu (a1), Wei Yu (a1) and Guangsheng Fu (a1)...

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