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Electrical properties and Kerr effect study of evaporated Fe/Si and Fe/glass thin films

Published online by Cambridge University Press:  30 October 2009

B. Ghebouli
Affiliation:
Département de Physique, Université Ferhat Abbas, 19000 Setif, Algeria
A. Layadi*
Affiliation:
Département de Physique, Université Ferhat Abbas, 19000 Setif, Algeria
A. Guittoum
Affiliation:
Centre de Recherche Nucléaire d'Alger (CRNA), 16000 Alger, Algeria
L. Kerkache
Affiliation:
Département de Physique, Université Ferhat Abbas, 19000 Setif, Algeria
M. Benkerri
Affiliation:
Département de Physique, Université Ferhat Abbas, 19000 Setif, Algeria
A. Klimov
Affiliation:
Joint Laboratory LEMAC,  IEMN CNRS 8520,  École Centrale de Lille,  59651 Villeneuve d'Ascq,  France
V. Preobrazhensky
Affiliation:
Joint Laboratory LEMAC,  IEMN CNRS 8520,  École Centrale de Lille,  59651 Villeneuve d'Ascq,  France
P. Pernod
Affiliation:
Joint Laboratory LEMAC,  IEMN CNRS 8520,  École Centrale de Lille,  59651 Villeneuve d'Ascq,  France
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Abstract

Electrical and magnetic properties were studied for evaporated Fe thin films on glass and Si substrates. These properties were investigated by means of the four point probe and the magneto-optical Kerr effect techniques. Rutherford backscattering (RBS) and scanning electron microscopy (SEM) experiments show no interdiffusion at the interface Fe/Si for these samples. The electrical resistivity $\rho $ is found to be larger in Fe/glass than in Fe/Si for the same thickness. Diffusion at the grain boundaries seems to be the dominant factor in the $\rho $ values in this 6 to 110 nm thickness range; the reflection coefficient is smaller in Fe/glass (R 0.40) than in Fe/Si(100) (R 0.65). Saturation field and strain values confirm that Fe films have a stress induced magnetic anisotropy. Coercive field HC values range from 2.45 Oe for Fe/Si(100) to 17.65 Oe for Fe/Si(111) for the same Fe thickness (45 nm).

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2009

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