Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T21:33:30.868Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

Published online by Cambridge University Press:  31 October 2012

A. Bobby ,
P.S. Gupta  and
B.K. Antony
A. Bobby*
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
P.S. Gupta
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
B.K. Antony
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
*
ae-mail: achammajohn@yahoo.com
Get access

Abstract

The reverse I-V characteristics of In-pWSe2 and Al-pWSe2 Schottky barrier diodes were investigated at room temperature with two different metal thicknesses. A model is presented on the basis of thermionic emission and tunneling to explain the unusually high leakage current observed in these diodes. It has been identified that the major contribution to leakage current is by tunneling mechanism, which significantly affects the reverse I-V characteristics of the Schottky contacts, along with a very small amount of thermionic emission current. We have also extracted various Schottky diode parameters of the two types of diodes fabricated and compared the data. It is found that the diode with 1000 Å metal thickness possesses more tunneling current compared to 500 Å diode.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 1 , October 2012 , 10104
Copyright
© EDP Sciences, 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Schottky, W., Naturwissenschaften 26, 843 (1938)CrossRef
Padovani, F.A., Stratton, R., Solid-State Electron. 9, 695 (1966)CrossRef
Chang, C.Y., Sze, S.M., Solid-State Electron. 13, 727 (1970)CrossRef
Hackam, R., Harrop, P., IEEE Trans. Electron Devices ED-19, 1231 (1972)CrossRef
Rideout, V.L., Solid-State Electron. 18, 541 (1975)CrossRef
Sze, S.M., Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)Google Scholar
Song, Y.P., Van Meirhaeghe, R.L., Laflere, W.H., Cardon, F., Solid-State Electron. 29, 633 (1986)CrossRef
Rhoderick, E.H., Williams, R.H., Metal-Semiconductor Contacts, 2nd edn. (Clarendon Press, Oxford, 1988)Google Scholar
Wittmer, M., Phys. Rev. B 42, 5249 (1990)CrossRef
Wittmer, M., Phys. Rev. B 43, 4385 (1991)CrossRef
Tung, R.T., Phys. Rev. B 45, 14509 (1992)CrossRef
Barus, M., Donoval, D., Solid-State Electron. 36, 969 (1993)CrossRef
Werner, J.H., Guttler, H.H., J. Appl. Phys. 69, 1522 (1991)CrossRef
Werner, J.H., Guttler, H.H., J. Appl. Phys. 73, 1315 (1993)CrossRef
Chen, T.P., Lee, T.C., Ling, C.C., Beling, C.D., Fung, S., Solid-State Electron. 36, 949 (1993)CrossRef
Singh, A., Cova, P., Masut, R.A., J. Appl. Phys. 7, 2336 (1994)CrossRef
Jang, M., Cho, W., Jung, W., Lee, S., J. Kor. Phys. Soc. 42, S189 (2003)
Kim, G.H., Kim, K.M., Seok, J.Y., Lee, H.J., Cho, D.Y., Han, J.H., Hwang, C.S., Nanotechnology 21, 385202 (2010)CrossRef
Donoval, D., Chvala, A., Sramaty, R., Kovac, J., Morvan, E., Dua, Ch., DiForte-Poisson, M.A., Kordos, P., J. Appl. Phys. 109, 063711 (2011)CrossRef
Chiquito, A.J., Amorim, C.A., Berengue, O.M., Araujo, L.S., Bernardo, E.P., Leite, E.R., J. Phys.: Condens. Matter 24, 225303 (2012)
Zubert, M., Starzak, L., Jablonski, G., Napieralska, M., Janicki, M., Pozniak, T., Napieralski, A., Microelectronics 43, 312 (2012)CrossRef
Pipinys, P., Lapeika, V., Adv. Condens. Matter Phys. 2010, 526929 (2010)CrossRef
Tseng, H.-H., Wu, C.Y., Solid-State Electron. 30, 383 (1987)CrossRef
Nieuwesteeg, K.J.B.M., van der Veen, M., Vink, T.J., Shannon, J.M., J. Appl. Phys. 74, 2581 (1993)CrossRef
Pipinys, P., Pipiniene, A., Rimeika, A., J. Appl. Phys. 86, 6875 (1999)CrossRef
Pipinys, P., Lapeika, V., J. Appl. Phys. 99, 093709 (2006)CrossRef
Tascioglu, I., Aydemir, U., Altindal, S., Kinaci, B., Ozcelik, S., J. Appl. Phys. 109, 054502 (2011)CrossRef
Janardhanam, V., Park, Y.K., Yun, H.J., Ahn, K.S., Choi, C.J., IEEE Electron Device Lett. 33, 949 (2012)CrossRef
Jaegermann, W., in Photoelectrochemistry and Photovoltaics of Layered Semiconductors, edited by Aruchamy, A. (Kluwer Academic Publishers, Dordrecht, 1992), p. 195CrossRefGoogle Scholar
Achamma, J.M., Patel, K.D., Srivastava, R., Thin Solid Films 518, 4417 (2010)
Mathai, A.J., Patel, K.D., Crys. Res. Technol. 45, 717 (2010)CrossRef
Mathai, A.J., Sumesh, C.K., Modi, B.P., Mater. Sci. Appl. 2, 1000 (2011)
Achamma, J.M., Patel, K.D., Srivastava, R., Thin Solid Films 518, 2695 (2010)
Mathai, A.J., IEEE Trans. Electron Devices 58, 4283 (2011)CrossRef
Wittmer, M., Phys. Rev. B 43, 4385 (1991)CrossRef
Yu, A.Y.C., Snow, E.H., J. Appl. Phys. 39, 3008 (1968)CrossRef