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Effect of oxygen pressure on the structural and magnetic properties of thin Zn0.98Mn0.02O films

Published online by Cambridge University Press:  02 December 2011

A. Khodorov
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
A.G. Rolo
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
E.K. Hlil
Affiliation:
Institut Néel, CNRS, Université J. Fourier, BP 166, 38042 Grenoble, France
J. Ayres de Campos
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
O. Karzazi
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco
S. Levichev
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
M.R. Correia
Affiliation:
Physics Department and I3N, University of Aveiro, 3810-193 Aveiro, Portugal
A. Chahboun*
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal Physics Department, FST Tanger, BP 416 Ziaten, Tanger, Morocco
M.J.M. Gomes
Affiliation:
Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
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Abstract

Thin Zn0.98Mn0.02O films were grown by pulsed laser deposition on glass substrates under oxygen pressure. The structural properties were studied by X-ray diffraction and Raman techniques, while the conductivity was characterized by the Hall effect. The oxygen pressure during the growth seems to govern the structural and the electrical properties of the thin Zn0.98Mn0.02 films. In fact, the micron size grain and the resistivity of the Zn0.98Mn0.02O increase with the partial oxygen pressure. However, no evident effect was observed on the magnetic behavior. Electronic structure calculations were performed and magnetic moment carried by Mn atom was computed as well.

Type
Research Article
Copyright
© EDP Sciences, 2011

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