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Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films
Published online by Cambridge University Press: 23 December 2010
Abstract
The temperature dependence of the electrical conductivity before and after
gamma irradiation of hydrogenated amorphous silicon (a-Si:H) films, prepared
by the hot wire method, at a dose of 2 kGy of 60Co gamma irradiation
are presented and discussed. Fourier transform infrared spectroscopy (FTIR)
measurements provide useful information on the characteristics of bond
configurations in a-Si:H before and after gamma irradiation. The
conductivity increased and the bond configurations changed significantly
after gamma irradiation. The results are explained by the filling of shallow
donor states and variation of bond type due to migration of hydrogen atoms
under the effect of irradiation. The behaviour of the conductivity is
consistent with a hopping mechanism. The temperature dependence of the
conductivity of a-Si:H exhibits a $T^{-1/4}$ law, instead of the $T^{-1/2}$
law, after gamma irradiation.
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- © EDP Sciences, 2010