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Correlation of atomic force microscopy and photoluminescence analysis of GaAs nanocrystallites elaborated by electrochemical etching of n+ type GaAs

Published online by Cambridge University Press:  19 July 2010

T. Abdellaoui ,
A. Bardaoui ,
M. Daoudi  and
R. Chtourou
T. Abdellaoui*
Affiliation:
Laboratoire de Photovoltaïques, Semiconducteurs et Nanostructures, Centre des Recherches et des Technologies de l'Énergie, BP 95, Hammam-Lif, 2050, Tunisia
A. Bardaoui
Affiliation:
Laboratoire de Photovoltaïques, Semiconducteurs et Nanostructures, Centre des Recherches et des Technologies de l'Énergie, BP 95, Hammam-Lif, 2050, Tunisia
M. Daoudi
Affiliation:
Laboratoire de Photovoltaïques, Semiconducteurs et Nanostructures, Centre des Recherches et des Technologies de l'Énergie, BP 95, Hammam-Lif, 2050, Tunisia
R. Chtourou
Affiliation:
Laboratoire de Photovoltaïques, Semiconducteurs et Nanostructures, Centre des Recherches et des Technologies de l'Énergie, BP 95, Hammam-Lif, 2050, Tunisia
*
tarekcrt@yahoo.fr
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Abstract

GaAs nanocrystallites are elaborated by electrochemical etching of n+ type GaAs substrates. Photoluminescence (PL) and atomic force microscope (AFM) images analysis are used to study the porous layers obtained with different etching times. Two kind of quantum confinement due to the formation of two nanostructures of different sizes are observed from room temperature photoluminescence (RTPL) spectra. The surface topography and the density of grains of the porous GaAs (π-GaAs) samples are investigated using the AFM technique. AFM images showed that the structure of films was nanocrystalline with a grain size close to 7 nm, this was confirmed by photoluminescence spectroscopy (PL) and the effective mass theory.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 51 , Issue 2 , August 2010 , 20501
Copyright
© EDP Sciences, 2010

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